Journal of Crystal Growth 311 (2009) 789-793.
Diamond and Related Materials 18 (2009) 249-252.
physica status solidi (a) 206 (2009) 276-280.
Physical Review B 79 (2009) 115306(1)-115306(13).
Diamond and Related Materials 18 (2009) 722-725.
Diamond and Related Materials 18 (2009) 734-739.
Diamond and Related Materials 18 (2009) 776-778.
Sensors 9 (5) (2009) 3549-3562.
Diamond and Related Materials 18 (2009) 800-803.
Physica E: Low-dimensional Systems and Nanostructures 41 (2009) 982-985.
K. Žídek, F. Trojánek, B. Dzurňák, P. Malý, I. Pelant
Physica E: Low-dimensional Systems and Nanostructures 41 (2009) 959-962.
physica status solidi (c) 6 (2009) 1713-1716.
Journal of Physics D: Applied Physics 42 (2009) 135102(1)-135102(5).
Applied Physics Letters 94 (2009) 211903(1)-211903(3).
Advanced Engineering Materials 11 (2009) B71-B76.
Thin Solid Films 518 (2009) 343-347.
Diamond and Related Materials 18 (2009) 1098-1101.
Solar Energy Materials and Solar Cells 93 (2009) 1444-1447.
Philosophical Magazine 89, 28-30 (2009) 2557-2571.
physica status solidi (b) 246 (2009) 2654-2657.
physica status solidi (b) 246 (2009) 2828-2831.
physica status solidi (b) 246 (2009) 2798-2801.
physica status solidi (b) 246 (2009) 2832-2835.
Diamond and Related Materials 18 (2009) 918-922.
Nanotechnology 20 (2009) 045302 (1)-045302 (6).
Thin Solid Films 517 (2009) 6829-6832.
A. Fučíkova, J. Valenta, I. Pelant, V. Březina
Chemical Papers Vol. 63 (2009), 704-708
Diamond and Related Materials 18 (2009) 258-263.
Thin Solid Films 517 (2009) 3738-3741.
physica status solidi (a) 206 (2009) 2038-2041.
Acta Biomaterialia 5 (8) (2009) 3076-3085.
Nature Physics 5 (2009) 840-844.
P. Malý, F. Trojánek, T. Miyoshi, K. Yamanaka, K. Luterová, I. Pelant, P. Němec
Ultrafast carrier dynamics in CdSe nanocrystalline films on crystalline silicon substrate.
Thin Solid Films 403-404 (2002) 462 - 466
J. Kudrna, I. Pelant, J. Štěpánek, F. Trojánek, P. Malý
Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.
Appl. Phys. A-Mater. 74 (2002) 253 - 256
Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
J. Appl. Phys. 92 (2002) 2323 - 2329
Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
Appl. Phys. A-Mater. 74 (2002) 557 - 560
V. Švrček, I. Pelant, J. -L. Rehspringer, P. Gilliot, D. Ohlmann, O. Grégut, B. Hönerlage, T. Chvojka, J. Valenta, J. Dian
Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon.
Mat. Sci. Eng. C-Bio S. 19/1-2 (2002) 233 - 236
Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystal.
Appl. Phys. Lett. 81 (2002) 1396 - 1398
Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.
J. Appl. Phys. 92 (2002) 587 - 593
Model of transport in microcrystalline silicon.
J. Non-Cryst. Solids 299-302 (2002) 355 - 359
Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
J. Non-Cryst. Solids 299-302 (2002) 360 - 363
T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
Grains in protocrystalline silicon grown at very low substrate temperatures.
J. Non-Cryst. Solids 299-302 (2002) 767 - 770
International Summer School Role of Physics in Future Applications: From Nanotechnology to Macroelectronics.
Thin Silicon Newsletter, publ. by aSiNet thematic network newsletter within EC growth programme, editor: J. Andreu, No.3 (2002), 1 ISSN 1579-4555 ., 2002, pp. 1 ISSN 1579-4555
V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
J. Non-Cryst. Solids 299-302 (2002) 395 - 399
T. Holec, T. Chvojka, I. Jelínek, J. Jindřich, I. Němec, I. Pelant, J. Valenta, J. Dian
Determination of sensoric parameters of porous silicon in sensing of organic vapors.
Mat. Sci. Eng. C-Bio S. 19 (2002) 251 - 254
K. Luterová, I. Pelant, I. Mikulskas, R. Tomasiunas, D. Muller, J. -J. Grob, J. -L. Rehspringer, B. Hönerlage
Stimulated emission in blue-emitting Si+-implanted SiO2 films?
J. Appl. Phys. 91 (2002) 2896 - 2900
Features of chrge carrier transport in mc-Si:H/a-Si:H superlattices
Mater. Sci. Forum 384-385 (2002) 301 - 304
G. Juška, K. Arlauskas, N. Nekrašas, J. Stuchlík, X. Niquille, N. Wyrch
Features of Charge carrier transport determined from carrier extraction current in uc-Si:H.
J. Non-Cryst. Solids 299-302 (2002) 375 - 379
B. Rezek, J. A. Garrido, M. Stutzmann, C. E. Nebel, E. Snidero, P. Bergonzo
Local Oxidation of Hydrogenated Diamond Surfaces for Device Fabrication.
phys. status solidi a 139 (2002) 139 (2002) - 528
Laser beam induced currents in polycristalline silicon thin films prepared by interference laser crystallization.
J. Appl. Phys. 91 (2002) 4220 - 4227