Publikace
Ve výpisu publikací najdete všechny důležité publikační výsledky výzkumu a vývoje našich vědeckých pracovníků od roku 1961.
- Self-compensating incorporation of Mn in Ga1-xMnxAsActa Physica Polonica A 100 (2001) 319-325.
- Ab initio calculations of exchange interactions, spin-wave stiffness constants, and Curie temperatures of Fe, Co, and NiPhys. Rev. B 64 (2001) 174402
- Ordering and segregation in XPt (X=V, Cu, and Au) random alloysPhys. Rev. B 64 (2001) 134111
- Correlation between core-level shift and bulk modulus in transition-metal carbides and nitridesPhys. Rev. B 64 (2001) 235115
- Harms and benefits from social imitationPhysica A 299 (2001) 334
- Mean-field approximation for a limit order driven market modelPhys. Rev. E 64 (2001) 056136
- First- principles study of stability and local order in substitutional Ta-W alloysPhys. Rev. B 64 (2001) 085112
- Interface resistance of disordered magnetic multilayersPhys. Rev. B 63 (2001) 064407
- Journal of Magnetism and Magnetic Materials 226-230 (2001) 585-587.
- Journal of Magnetism and Magnetic Materials 226-230 (2001) 967-969.
- Physica B: Condensed Matter 294-295 (2001) 249-252.
- Journal of Alloys and Compounds 319 (2001) 29-33.
- Physical Review B 63 (2001) 064423(1)-064423(8).
- Journal of Alloys and Compounds 314 (2001) 51-55.
- Journal of Alloys and Compounds 322 (2001) 7-13.
- Philosophical Magazine B 81 (2001) 569-581.
- Journal of Magnetism and Magnetic Materials 234 (2001) 207-212.
- Physical Review B 64 (2001) 144408(1)-144408(8).
- Solid State Communications 117 (2001) 641-644.
- Journal of Applied Physics 89 (2001) 7413-7415.
- Applied Physics Letters 79 (2001) 647-649.
- Czechoslovak Journal of Physics 51 (2001) 743-748.
- Journal of Non-Crystalline Solids 287 (2001) 344-348.
- Czechoslovak Journal of Physics 51 (2001) 685-692.
- Philosophical Magazine B 81 (2001) 1175-1189.
- Effects of adsorbates on submonolayer growthCollective Diffusion on Surfaces: Correlation Effects and Adatom Interactions, Eds. M.C. Tringides and Z. Chvoj, Kluwer Academic Publisher, 2001, pp. 247-257. ISBN: 978-0-7923-7115-1, 978-0-7923-7116-8.
- Physical Review Letters 87 (2001) 226802(1)-226802(4).
- Physical Review B 64 (2001) 094402(1)-094402(9).
- Physical Review Letters 87 (2001) 046801(1)-046801(4).
- Physical Review B 63 (2001) 104427(1)-104427(13).
- IEEE Transactions on Magnetics 37 (2001) 2104-2107.
- IEEE Transactions on Magnetics 37 (2001) 2331-2333.
- Chemical generation of atomic iodine for chemical oxygen-iodine laser:Modeling of reaction systemsChem. Phys. 269 (2001) 167
- Charge transport in microcrystalline Si- the specific features.Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
- Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.J. Appl. Phys. 89 (2001) 1800 - 1805
- Microcrystalline Silicon - Relation between Transport and Microstructure.Solid State Phenom. 80-81 (2001) 213 - 224
- Experimental Aspects of Metal Particle Diffusion on a Silicon Surface.in: M.C.Tringides, Z.Chvoj eds.: Collective Diffusion on Surfaces:Collective Behaviour and the Role of Adatom Interaction. Kluwer, Dordrecht 2001, 11-22., 2001, pp.
- A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.Philos. Mag. Lett. 81 (2001) 405 - 410
- Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.Thin Solid Films 383 (2001) 271 - 273
- Electroluminescence from Sol-Gel Derived Film of CdS Nanocrystals.phys. status solidi a 184 (2001) R1 - R3
- Carrier diffusion in microcrystalline silicon studied by picosecond laser induced grating technique.Appl. Phys. Lett. 79 (2001) 626 - 628
- Mechanical design aspects of a soft X-ray plane grating monochromator.Nucl. Instrum. Meth. A 467-468 (2001) 561 - 564
- Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.Appl. Phys. Lett. 79 (2001) 2540 - 2542
- Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.phys. status solidi a 187 (2001) 487 - 491
- Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
- Si+ and Ge+ ion implanted SiO2 matrices: Photoluminiscence pecularities.Lithuanian J. Phys. 41 (2001) 399 - 403
- Features of Charge Carrier Transport in uc-Si:H/a-Si: Superlattices.Mater. Sci. Forum 384-385 (2001) 301 - 304
- Journal of Applied Physics 90 (2001) 1303-1306.
- Superconductor Science and Technology 14 (2001) L25-L30.
- Physical Review B 64 (2001) 064405(1)-064405(9).