Materiály a systémy v nanoměřítku

  1. E. Verveniotis, B. Rezek, E. Šípek, J. Stuchlík, J. Kočka
    Role of current profiles and atomic force microscope tips on local lectric crystallization of amorphous silicon
    Thin Solid Films 518 (2010) 5965-5970.
  2. J. Červenka, M. Ledinský, J. Stuchlík, T. h. Stuchlíková, S. Bakardjieva, K. Hruška, A. Fejfar, J. Kočka
    The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
    Nanotechnology 21 (2010) 415604(1)-415604(7).
  3. P. Vašek, P. Svoboda, V. Novák, M. Cukr, Z. Výborný, V. Jurka, J. Stuchlík, M. Orlita, D.K. Maude
    Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors
    Journal of Superconductivity and Novel Magnetism 23 (2010) 1161-1163.
  4. J. Červenka, C. F. J. Flipse
    Fullerene monolayer formation by spray coating
    Nanotechnology 21 (2010) 065302(1)-065302(7).
  5. J. Červenka, K. van de Ruit, Kees Flipse
    Effect of local doping on the electronic properties of epitaxial graphene on SiC
    physica status solidi (a) 207 (2010) 595-598.
  6. J. Červenka, K. van de Ruit, C. F. J. Flipse
    Giant inelastic tunneling in epitaxial graphene mediated by localized states
    Physical Review B 81 (2010) 205403(1)-205403(5).
  7. J. Červenka, K. van de Ruit, C. F. J. Flipse
    Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001)
    physica status solidi (b) 247 (2010) 2992-2996.
  8. A. Ogane, S. Honda, Y. Uraoka, T. Fuyuki, A. Fejfar, J. Kočka
    Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate
    Journal of Crystal Growth 311 (2009) 789-793.
  9. B. Rezek, J. Čermák, A. Kromka, M. Ledinský, J. Kočka
    Photovoltage effects in polypyrrole-diamond nanosystem.
    Diamond and Related Materials 18 (2009) 249-252.
  10. L. Fekete, P. Kužel, H. Němec, F. Kadlec, A. Dejneka, J. Stuchlík, A. Fejfar
    Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy
    Physical Review B 79 (2009) 115306(1)-115306(13).
  11. J. Čermák, B. Rezek, A. Kromka, M. Ledinský, J. Kočka
    Electrochemical synthesis and electronic properties of polypyrrole on intrinsic diamond
    Diamond and Related Materials 18 (2009) 1098-1101.
  12. J. Kočka, T. h. Stuchlíková, M. Ledinský, J. Stuchlík, T. Mates, A. Fejfar
    Microcrystalline silicon, grain boundaries and role of oxygen.
    Solar Energy Materials and Solar Cells 93 (2009) 1444-1447.
  13. J. Kočka, A. Vetuško, A. Fejfar
    Some controversial points related to transport in microcrystalline silicon.
    Philosophical Magazine 89, 28-30 (2009) 2557-2571.
  14. B. Rezek, E. Šípek, M. Ledinský, J. Stuchlík, A. Vetuško, J. Kočka
    Creating nanocrystals in amorphous silicon using a conductive tip
    Nanotechnology 20 (2009) 045302 (1)-045302 (6).
  15. J. Stuchlík, M. Ledinský, S. Honda, I. Drbohlav, T. Mates, A. Fejfar, K. Hruška, T. h. Stuchlíková, J. Kočka
    LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition.
    Thin Solid Films 517 (2009) 6829-6832.
  16. J. Červenka, M. I. Katsnelson, C. F. J. Flipse
    Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
    Nature Physics 5 (2009) 840-844.
  17. T. Mates, A. Fejfar, B. Rezek, J. Kočka, P.C. P. Bronsveld, J.K. Rath, R.E.I.Schropp
    C-AFM and X-TEM: Studies of Mixed-Phase Silicon Thin Films.
    Imaging and Microscopy 10 (2008) 30-32.
  18. M. Ledinský, A. Vetuško, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka, J. Štěpánek
    Crystallinity of the mixed phase silicon thin films by Raman spectroscopy.
    Journal of Non-Crystalline Solids 354 (2008) 2253-2257.
  19. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate.
    Thin Solid Films 516 (2008) 4966-4969.
  20. S. Honda, T. Mates, B. Rezek, A. Fejfar, J. Kočka
    Microscopic study of the H2O vapor treatment of the silicon grain boundaries.
    Journal of Non-Crystalline Solids 354 (2008) 2310-2313.
  21. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    A simple quality factor for characterization of thin silicon films
    Journal of Non-Crystalline Solids 354 (2008) 2227-2230.
  22. A. Vetuško, M. Ledinský, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Mapping of mechanical stress in silicon thin films on silicon cantilevers by Raman microspectroscopy
    Journal of Non-Crystalline Solids 354 (2008) 2235-2237.
  23. B. Rezek, E. Šípek, M. Ledinský, P. Krejza, J. Stuchlík, A. Fejfar, J. Kočka
    Spatially localized current-induced crystallization of amorphous silicon films
    Journal of Non-Crystalline Solids 354 (2008) 2305-2309.
  24. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses
    Journal of Non-Crystalline Solids 354 (2008) 2451-2454.
  25. T. Mates, P.C.P. Bronsveld, A. Fejfar, B. Rezek, J. Kočka, J.K. Rath, R.E.I. Schropp
    Structure of mixed-phase Si films studied by C-AFM and X-TEM.
    Journal of Physics: Conference Series 61 (2007) 790-794.
  26. J. Čermák, B. Rezek, V. Cimrová, D. Výprachtický, M. Ledinský, T. Mates, A. Fejfar, J. Kočka
    Correlation of atomic force microscopy detecting local conductivity and micro-Raman spectroscopy on polymer-fullerene composite films
    Physica Status Solidi-Rapid Research Letters 1 (5) (2007) 193-195.
  27. J. Kočka, T. Mates, M. Ledinský, J. Stuchlík, A. Fejfar, K. Gunnarsson
    Controlled growth of nanocrystalline silicon on permalloy micro-patterns
    Applied Physics A-Materials Science & Processing A 88 (2007) 797-800.
  28. Z. Remeš, A. Choukourov, J. Stuchlík, J. Potmesil, M. Vanecek
    Nanocrystalline diamond surface functionalization in radio frequency plasma
    Diamond and Related Materials 15 (2006) 745-748.
  29. S. Honda, T. Mates, K. Knížek, M. Ledinský, A. Fejfar, J. Kočka, T. Yamazaki, Y.Uraoka, T.Fuyuki
    Hydrogenation of polycrystalline silicon thin films
    Thin Solid Films 501 (2006) 144-148.
  30. H.Boldyryeva, S.Honda, A.Macková, T. Mates, A. Fejfar, J. Kočka
    Characterization of hydrogen contained in passivated poly-Si and microcrystalline-Si by ERDA technique
    Surface and Interface Analysis 38, č.4 (2006) 819-822.
  31. J. Kočka, T. Mates, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon – review of typical features.
    Thin Solid Films 501 (2006) 107-112.
  32. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Transport properties of microcrystalline silicon prepared at high growth rate.
    Journal of Non-Crystalline Solids 352 (2006) 1097-1100.
  33. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Microcrystalline silicon prepared at magnetic field modified nucleation
    Journal of Non-Crystalline Solids 352 (2006) 901-905.
  34. M. Ledinský, L. Fekete, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Characterization of mixed phase silicon by Raman spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 1209-1212.
  35. T. Mates, P.C.P.Bronsveld, A. Fejfar, B. Rezek, J. Kočka, J.K.Rath, R.E.I. Schropp
    Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM.
    Journal of Non-Crystalline Solids 352 (2006) 1011-1015.
  36. S.Honda, A. Fejfar, J. Kočka, T.Yamazaki, A.Ogane, Y.Uraoka, T.Fuyuki
    Annealing in water vapor as a new method for improvement of silicon thin film properties
    Journal of Non-Crystalline Solids 352 (2006) 955-958.
  37. S.Honda, T. Mates, M. Ledinský, A. Fejfar, J. Kočka, T.Yamazaki, Y.Uraoka, T.Fuyuki, H.Boldyryeva, A.Macková, V.Peřina
    Defects generation by hydrogen passivation of polycrystalline silicon thin films.
    Solar Energy 80 (2006) 653-657.
  38. P.C.P.Bronsveld, J.K.Rath, R.E.Schropp, T. Mates, A. Fejfar, B. Rezek, J. Kočka
    Internal structure of mixed phase hydrogenated silicon thin films made at 39oC
    Applied Physics Letters 89 (2006) 051922-1-051922-3.
  39. A. Fojtík, J. Valenta, The Ha Stuchlíková, J. Stuchlík, I. Pelant, J. Kočka
    Electroluminescence of silicon nanocrystals in p-i-n diode structures.
    Thin Solid Films 515 (2006) 775-777.
  40. L. Fekete, H. Němec, F. Kadlec, P. Kužel, J. Stuchlík, A. Fejfar, J. Kočka
    Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 2846-2849.
  41. G. Juška, K. Arlauskas, J. Stuchlík, R. Österbacka
    Non-Langevin bimolecular recombination in low-mobility materials.
    Journal of Non-Crystalline Solids 352 (2006) 1167-1171.
  42. A. Fejfar, J. Stuchlík, T. Mates, M. Ledinský, S. Honda, J. Kočka
    Patterning of hydrogenated microcrystalline silicon growth by magnetic field
    Applied Physics Letters 87 (2005) 011901(1)- 01190(3).
  43. B. Rezek, J. Stuchlík, J. Kočka, A. Stemmer.
    Persistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids
    Journal of Non-Crystalline Solids 351 (2005) 3127-3131.
  44. N. Někrašas, G. Sliaužys, G. Juška, K. Arlauskas, J. Stuchlík, J. Kočka
    Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon
    Acta Physica Polonica A 107 (2005) 373-376.
  45. S. Honda, T. Mates, M. Ledinský, J. Oswald, A. Fejfar, J. Kočka, T. Yamazaki, Y. Uraoka, T. Fuyuk
    Effect of hydrogen passivation on polycrystalline silicon thin films
    Thin Solid Films 487 (2005) 152- 156.
  46. K. Luterová, V. Švrček, T. Mates, M. Ledinský, M. Ito, A. Fejfar, J. Kočka
    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
    Thin Solid Films 451-452 (2004) 408-412.
  47. J. Kočka, A. Fejfar, T. Mates, P. Fojtík, K. Dohnalová, K. Luterová, J. Stuchlík, T. h. Stuchlíková, I. Pelant, B. Rezek, A. Stemmer, M. Ito
    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon.
    physica status solidi (c) 1 (2004) 1097-1114.
  48. A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka
    Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.
    J. Non-Cryst. Solids 338-340 (2004) 303 - 309
  49. J. Kočka, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, J. Stuchlík, I. Pelant, A. Fejfar, M. Ito, K. Ro, H. Uyama
    Formation of Microcrystalline Silicon at Low Temperatures and Role of Hydrogen
    Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
  50. G. Juška, N. Nekrašas, K. Arlauskas, J. Stuchlík, A. Fejfar, J. Kočka
    Photogenerated Carriers in mc-Si:H/a-Si:H Multilayers
    Journal of Non-Crystalline Solids 338-340 (2004) 353-356.