Publikace
Ve výpisu publikací najdete všechny důležité publikační výsledky výzkumu a vývoje našich vědeckých pracovníků od roku 1961.
- Exchange interactions and critical temperatures in diluted magnetic semiconductorsJ. Phys.-Condens. Mat. 16 (2004) S5571
- Curie temperature and exchange interactions in diluted group-Iv magnetic semiconductorsJ. Magn. Magn. Mater. 272 (2004) 1995
- Phys. Rev. B 69 (2004) 115208
- J. Magn. Magn. Mater. 272 (2004) 1194
- The rise and fall of a networked society: A formal modelProc. Natl. Acad. Sci. USA 101 (2004) 1439-1442
- Phys. Rev. B 69 (2004) 165212
- Compositional dependence of the formation energies of substitutional and interstitial Mn in partially compensated (Ga,Mn)AsActa Phys. Polon. A 105 (2004) 637
- On-site Coulomb interaction and the magnetism of (GaMn)N and (GaMn)AsPhys. Rev. B 69 (2004) 195203
- Exchange interactions and Curie temperatures in diluted magnetic semiconductorsJ. Magn. Magn. Mater. 272 (2004) 1983
- Exchange interactions in diluted magnetic semiconductorsJ. Phys.-Condens. Mat. 16 (2004) S5491
- Spin and orbital magnetic state of Uge2 under pressurePhysical Review B 70 (2004) 134506(1)-134506(6).
- Coulomb correlation effects on the electronic structure of III-IV diluted magnetic semiconductorsPhys. Rev. B 69 (2004) 125207
- Phys. Rev. B 69 (2004) 212410
- Phys. Rev. B 69 (2004) 073403
- Inelastically scaterring particles and wealth distribution in an open economyPhys. Rev. E 69 (2004) 046102
- Electronic and phase stability properties of V-X (X = Pd, Rh, Ru) alloysJ. Phys.-Condens. Mat. 16 (2004) 5615
- Residual resistivity of diluted III-V magnetic semiconductorsJ. Phys.-Condens. Mat. 16 (2004) S5607
- Residual resistivity of (Ga,Mn)As alloys from ab initio calculationsJ. Magn. Magn. Mater. 272 (2004) 1987
- An alternative method of interferogram evaluation and processingCzechoslovak Journal of Physics 54 Suppl.C (2004) C349-C358.
- Journal of Magnetism and Magnetic Materials 272-276 (2004) E425-E426.
- Journal of Magnetism and Magnetic Materials 272-276 (2004) 874-875.
- Journal of Magnetism and Magnetic Materials 272-276 (2004) 209-210.
- Physical Review B 70 (2004) 024409(1)-024409(9).
- Czechoslovak Journal of Physics 54 (2004) D539-D542.
- Czechoslovak Journal of Physics 54 (2004) D331-D334.
- Electronic structure and magnetism of diluted magnetic semiconductorsJournal of Physics: Condensed Matter 16 (2004) 5481(S)-5489(S).
- Physical Review Letters 92 (2004) 037204(1)-037204(4).
- Physical Review B 69 (2004) 085209(1)-085209(6).
- Physical Review Letters 93 (2004) 046602(1)-046602(4).
- Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a reviewInternational Journal of Modern Physics B 18 (2004) 1083-1118.
- Physical Review B 70 (2004) 245211(1)-245211(10).
- Physical Review Letters 92 (2004) 126603(1)-126603(4).
- Physical Review B 70 (2004) 241301(1)-241301(4).
- Physical Review B 70 (2004) 195201(1)-195201(6).
- Physical Review B 70 (2004) 081312(1)-081312(4).
- Frustration of a Bose Gas inside an optical latticeLaser Physics 14 (2004) 603-603.
- Advances in development of chemical oxygen-iodine laserCzech. J. Phys. 54 (2004) 561
- Chemical oxygen-iodine laser using a new method of atomic iodine generationIEEE J. Quantum Electron. 40 (5) (2004) 564
- CFD modelling of an instantaneous generation of atomic iodine in chemical oxygen-iodine laserProc. SPIE 5777 (2004) 192
- Thin silicon films deposited at low substrate temperatures studied by surface photovoltage techniqueThin Solid Films 451-452 (2004) 408-412.
- Single atom diffusion of Pb on a Si(111)-7x7 surface.Surf. Sci. 566-568 (2004) 130 - 136
- Photoemission study of two=dimensional phase transitions on the Pb-Si(111) surface.Surf. Sci. 566-568 (2004) 804 - 809
- Activation of binary Zr-V non-evaporable getters: a soft X-ray photoemission study of carbide formation.Surf. Sci. 566-568 (2004) 1246 - 1249
- Grains of Porous Silicon Embedded in SiO2: Studies of Optical Gain and Electroluminescence.Solid State Phenom. 99-100 (2004) 31 - 36
- Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation.Applied Physics Letters 84 (2004) 3280-3282.
- physica status solidi (c) 1 (2004) 1097-1114.
- Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.J. Non-Cryst. Solids 338-340 (2004) 303 - 309
- Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
- Journal of Non-Crystalline Solids 338-340 (2004) 353-356.
- Evidence for valence-charge fluctuation in the sqr(3) x sqr(3) - Pb/Si(111)systemPhys. Rev. B 70 (2004) 55334