1. H. Beran, V. Cílek, A. Fejfar, E. Hulicius, L. Lízal, V. Mařík, V. Pačes, M. Punčochář, R. Šrám, J. Vondráš, V. Wagner
    Where Czech energetics will be directed?
    ISBN 978-80-7261-560-5 Albatros Media a.s., 2018
  2. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  3. G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou
    Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
    Applied Surface Science 306 (2014) 89-93.
  4. Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius
    Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
    Journal of Crystal Growth 396 (2014) 54-60.
  5. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  6. A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken
    InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
    Nanotechnology 25 (2014) 455501-1-455501-6.
  7. P. Morávek, J. Pangrác, M. Fulem, E. Hulicius, K. Růžička
    Vapor pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum
    Journal of Chemical & Engineering Data 59 (2014) 4179-4183.
  8. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  9. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  10. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  11. P. Gladkov, E. Hulicius, T. Paskova, E. Preble, K.R. Evans
    Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
    Applied Physics Letters 100 (2011) 031908(1)-031908(3).
  12. M. Fulem, P. Morávek, J. Pangrác, E. Hulicius, T. Šimeček, K. Růžička, V. Růžička, B. Kozyrkin, V. Shatunov
    Vapor Pressure of Trimethylantimony and tert-Butyldimethylantimony
    Journal of Chemical & Engineering Data 55 (2010) 362-365.
  13. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.
  14. M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
    Semiconductors 44 (2010) 66-71.
  15. K. Sommer, L. Baldi, E. Hulicius, C. Moitier, F. Mudry, T. Wilkins
    Economic Impact of NMP
    NMP Expert Advisory Group (EAG) Position Paper on Future RTD Activities of NMP for the Period 2010 - 2015, Publications Office of the European Union, Luxembourg 2010, pp. 5 – 30, ISBN 978-92-79-14065-5
  16. K. Moiseev, E. Ivanov, V. Romanov, M. Mikhailova, Y. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
    Physics Procedia 3 (2010) 1189-1193.
  17. A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, O.Caha
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 312 (2010) 1383-1387.
  18. I. Matulková, J. Cihelka, J. Vyskočil, Z. Zelinger, E. Hulicius, T. Šimeček, S. Civiš
    Diagnostic and characterization of the VCSEL diodes based on GaSb
    Applied Physics B: Laser and Optics 99 (2010) 333-338.
  19. P. Morávek, M. Fulem, K. Růžička, J. Pangrác, E. Hulicius, T. Šimeček, V. Růžička, S.A. Rushworth
    Vapor Pressure of Tetrakis(dimethylamino)germanium
    Journal of Chemical & Engineering Data 55 (2010) 4095-4097.
  20. M. Fulem, K. Růžička, P. Morávek, J. Pangrác, E. Hulicius, B. Kozyrkin, V. Shatunov
    Vapor Pressure of Selected Organic Iodides
    Journal of Chemical & Engineering Data 55 (2010) 4780-4784.
  21. P. Gladkov, J. Humlíček, E. Hulicius, T. Šimeček, T. Paskova, K. Evans
    Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
    Journal of Crystal Growth 312 (2010) 1205-1209.
  22. J. Oswald, P. Hazdra, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác, J. Vyskočil
    Electro- and photoluminescence of InAs/GaAs quantum dot structures
    Journal of Physics: Conference Series 245 (2010) 012080(1)-012080(4).