Laboratoř pro Si:H depozice

  1. S. Morawiec, J. Holovský, M. J. Mendes, M. Müller, K. Ganzerová, A. Vetuško, M. Ledinský, F. Priolo, A. Fejfar, I. Crupi
    Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application
    Scientific Reports 6 (2016) 22481(1)-22481(10).
  2. O. Babčenko, H. Kozak, T. Izak, J. Stuchlík, Z. Remeš, B. Rezek, A. Kromka
    Fabrication of diamond-coated germanium ATR prisms for IR-spectroscopy
    Vibrational Spectroscopy 84 (2016) 67-73.
  3. J. Kočka, M. Müller, J. Stuchlík, T. h. Stuchlíková, J. Červenka, A. Fejfar
    Role of a-Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts
    physica status solidi (a) 1-5 (2016) (1)-(5).
  4. Z. Remeš, O. Babčenko, M. Varga, J. Stuchlík, V. Jirásek, V. Prajzler, P. Nekvindova, A. Kromka
    Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides
    Thin Solid Films 618 (2016) 130-133.
  5. I. M. Chernev, A. V. Shevlyagin, K. N. Galkin, J. Stuchlík, Z. Remeš, R. Fajgar, N. G. Galkin
    On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film
    Applied Physics Letters 109 (2016) 043902-1-043902-4.
  6. G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remeš, R. Fajgar, T. H. Stuchliková, J. Stuchlík
    Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
    Semiconductors 50 (2016) 935-940.
  7. V.A. Volodin, G.K. Krivyakin, A. A. Shklyaev, S.A. Kochubei, G.N. Kamaev, A.V. Dvurechendkii, A. Purkrt, Z. Remeš, R. Fajgar, T. H. Stuchlíková, J. Stuchlík
    Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers
    Proceedings of SPIE 10224 (2016) 102240D(1)-102240D(12).
  8. P. Pikna, M. Müller, C. Becker, A. Fejfar
    Passivation effect of water vapour on thin film polycrystalline Si solar cells
    physica status solidi (a) 231 (2016) 1969-1975.
  9. M. Müller, J. Kočka, A. Fejfar, J. Červenka
    Silicon Nanowire Array for Thin Film Solar Cells
    Aceees 2016
  10. A.V. Dvurechenskii, V.A. Volodin, G.K. Krivyakin, A.A. Shklyaev, S.A. Kochubei, I.G. Neizvestny, J. Stuchlík
    Raman Studies of Phase and Atomic Compositions of GeSi Nanosystems after Pulsed Annealing
    Avtometriya 52 (2016) 97-102.
  11. J. Červenka, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, Z. Výborný, J. Holovský, K. Hruška, A. Fejfar, J. Kočka
    Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition
    Physica Status Solidi-Rapid Research Letters 4 (2010) 37-39.
  12. A. Fejfar, A. Vetuško, V. Kalusová, O. Čertík, M. Ledinský, B. Rezek, J. Stuchlík, J. Kočka
    Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films
    physica status solidi (a) 207 (2010) 582-586.
  13. A. Vetuško, A. Fejfar, M. Ledinský, B. Rezek, J. Stuchlík, J. Kočka
    Comment on "Current routes in hydrogenated microcrystalline silicon"
    Physical Review B 81 (2010) 237301(1)-237301(4).
  14. A. Vetuško, A. Fejfar, M. Ledinský, B. Rezek, J. Stuchlík, J. Kočka
    Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films
    physica status solidi (c) 7 (2010) 728-731.
  15. M. Ledinský, A. Vetuško, J. Stuchlík, A. Fejfar, J. Kočka
    Raman mapping of microcrystalline silicon thin films with high spatial resolution
    physica status solidi (c) 7 (2010) 704-707.
  16. E. Verveniotis, B. Rezek, E. Šípek, J. Stuchlík, J. Kočka
    Role of current profiles and atomic force microscope tips on local lectric crystallization of amorphous silicon
    Thin Solid Films 518 (2010) 5965-5970.
  17. J. Červenka, M. Ledinský, J. Stuchlík, T. h. Stuchlíková, S. Bakardjieva, K. Hruška, A. Fejfar, J. Kočka
    The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
    Nanotechnology 21 (2010) 415604(1)-415604(7).
  18. P. Vašek, P. Svoboda, V. Novák, M. Cukr, Z. Výborný, V. Jurka, J. Stuchlík, M. Orlita, D.K. Maude
    Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors
    Journal of Superconductivity and Novel Magnetism 23 (2010) 1161-1163.
  19. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  20. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  21. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  22. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  23. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  24. V. Cech, J. Stuchlík
    Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.
    phys. status solidi a 187 (2001) 487 - 491
  25. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
    in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.