1. S. Honda, T. Mates, K. Knížek, M. Ledinský, A. Fejfar, J. Kočka, T. Yamazaki, Y.Uraoka, T.Fuyuki
    Hydrogenation of polycrystalline silicon thin films
    Thin Solid Films 501 (2006) 144-148.
  2. H.Boldyryeva, S.Honda, A.Macková, T. Mates, A. Fejfar, J. Kočka
    Characterization of hydrogen contained in passivated poly-Si and microcrystalline-Si by ERDA technique
    Surface and Interface Analysis 38, č.4 (2006) 819-822.
  3. J. Kočka, T. Mates, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon – review of typical features.
    Thin Solid Films 501 (2006) 107-112.
  4. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Transport properties of microcrystalline silicon prepared at high growth rate.
    Journal of Non-Crystalline Solids 352 (2006) 1097-1100.
  5. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Microcrystalline silicon prepared at magnetic field modified nucleation
    Journal of Non-Crystalline Solids 352 (2006) 901-905.
  6. M. Ledinský, L. Fekete, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Characterization of mixed phase silicon by Raman spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 1209-1212.
  7. T. Mates, P.C.P.Bronsveld, A. Fejfar, B. Rezek, J. Kočka, J.K.Rath, R.E.I. Schropp
    Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM.
    Journal of Non-Crystalline Solids 352 (2006) 1011-1015.
  8. S.Honda, A. Fejfar, J. Kočka, T.Yamazaki, A.Ogane, Y.Uraoka, T.Fuyuki
    Annealing in water vapor as a new method for improvement of silicon thin film properties
    Journal of Non-Crystalline Solids 352 (2006) 955-958.
  9. S.Honda, T. Mates, M. Ledinský, A. Fejfar, J. Kočka, T.Yamazaki, Y.Uraoka, T.Fuyuki, H.Boldyryeva, A.Macková, V.Peřina
    Defects generation by hydrogen passivation of polycrystalline silicon thin films.
    Solar Energy 80 (2006) 653-657.
  10. P.C.P.Bronsveld, J.K.Rath, R.E.Schropp, T. Mates, A. Fejfar, B. Rezek, J. Kočka
    Internal structure of mixed phase hydrogenated silicon thin films made at 39oC
    Applied Physics Letters 89 (2006) 051922-1-051922-3.
  11. A. Fojtík, J. Valenta, The Ha Stuchlíková, J. Stuchlík, I. Pelant, J. Kočka
    Electroluminescence of silicon nanocrystals in p-i-n diode structures.
    Thin Solid Films 515 (2006) 775-777.
  12. L. Fekete, H. Němec, F. Kadlec, P. Kužel, J. Stuchlík, A. Fejfar, J. Kočka
    Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 2846-2849.
  13. I. Pelant, P. Fojtik, K. Luterova, J. Kočka, K. Knížek, J. Stepanek
    Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
    Thin Solid Films 383 (2001) 101-103.
  14. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  15. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  16. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  17. V. Švrček, I. Pelant, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philos. Mag. Lett. 81 (2001) 405 - 410
  18. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  19. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  20. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
    in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
  21. G. Juška, N. Nekrašas, I. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si: Superlattices.
    Mater. Sci. Forum 384-385 (2001) 301 - 304