1. D. Nohavica, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, Z. Jarchovský
    Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
    International Journal of Nanotechnology 9 (2012) 732-745.
  2. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, N. D. Stoyanov, G. G. Zegrya, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, M. Slavická Zíková
    Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
    Journal of Applied Physics 112 (2012) 023108(1)-023108(5).
  3. J. Shrbená, K. Šperlink, E. Hulicius, V. Křečková, J. Kubátová, M. Solar
    Nanotechnologies in the Czech Republic
    NANOTECHNOLOGIES IN THE CZECH REPUBLIC 2012
  4. P. Gladkov, E. Hulicius, T. Paskova, E. Preble, K.R. Evans
    Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
    Applied Physics Letters 100 (2011) 031908(1)-031908(3).
  5. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  6. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  7. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.