Ing. Alice Hospodková, Ph.D.

Alice Hospodková
Vedoucí oddělení
Kategorie
Ved. věd. pracovník
Sekce (číslo)
Oddělení (číslo)
Laboratoř / vědecká skupina
Telefon
220 318 401
E-mail
hospodko [at] fzu.cz
Lokalita
Cukrovarnická
Místnost
F 113
  1. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).
  2. P. Hazdra, J. Oswald, A. Hospodková, E. Hulicius, J. Pangrác
    Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
    Thin Solid Films 543 (2013) 83-87.
  3. M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác
    Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy
    Semiconductors 47 (2013) 1041-1045.
  4. M. P. Mikhailova, L. V. Danilov, K. V. Kalinina, E. V. Ivanov, N. D. Stoyanov, G. G. Zegrya, Y. P. Yaklovev, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
    Chapter in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 105-131 (2013), ISBN: 0819495964.
  5. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  6. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, N. D. Stoyanov, G. G. Zegrya, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, M. Slavická Zíková
    Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
    Journal of Applied Physics 112 (2012) 023108(1)-023108(5).
  7. A. Hospodková
    Capping of InAs/GaAs quantum dots for GaAs based lasers
    Quantum Dots / Book 2, Ed. Ameenah Al-Ahmadi, Intech open, 2012.
  8. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  9. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  10. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  11. K. Kočí, L. K. Zatloukalová, Obalová, S. Krejčíková, Z. Lacný, L. Čapek, A. Hospodková, O. Šolcová
    Wavelength Effect on Photocatalytic Reduction of CO2 by Ag/TiO2 Catalyst
    Chinese Journal of Catalysis 32 (2011) 812-815.
  12. J. Oswald, P. Hazdra, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác, J. Vyskočil
    Electro- and photoluminescence of InAs/GaAs quantum dot structures
    Journal of Physics: Conference Series 245 (2010) 012080(1)-012080(4).
  13. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.
  14. M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
    Semiconductors 44 (2010) 66-71.
  15. K. Moiseev, E. Ivanov, V. Romanov, M. Mikhailova, Y. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
    Physics Procedia 3 (2010) 1189-1193.
  16. A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, O.Caha
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 312 (2010) 1383-1387.
  17. K. Kočí, K. Matějů, L. Obalová, S. Krejčíková, Z. Lacný, D. Plachá, L. Čapek, A. Hospodková, O. Šolcová
    Effect of silver doping on the TiO2 for photocatalytic reduction of CO2
    Applied Catalysis B: Environmental 96 (2010) 239-244.
  18. K. Neudert, F. Trojánek, K. Kuldová, J. Oswald, A. Hospodková, P. Malý
    Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    physica status solidi (c) 6 (2009) 853-856.
  19. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
    Superlattices and Microstructures 46 (2009) 324-327.
  20. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, J. Vyskočil, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures emitting in the 1.55 μm band.
    IOP Conference Series: Materials Science and Engineering 6 (2009) 012007-1-012007-4.
  21. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  22. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  23. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  24. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.
  25. A. Hospodková, V. Křápek, T. Mates, K. Kuldová, J. Pangrác, E. Hulicius, J. Oswald, K. Melichar, J. Humlíček, T. Šimeček
    Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
    Journal of Crystal Growth 298 (2007) 570-573.
  26. A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, T. Mates, K. Kuldová, K. Melichar, T. Šimeček
    Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
    Journal of Crystal Growth 298 (2007) 582-585.
  27. A. Hospodková, V. Křápek, K. Kuldová, J. Humlíček, E. Hulicius, J. Oswald, J. Pangrác, J. Zeman
    Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
    Physica E: Low-dimensional Systems and Nanostructures 36 (2007) 106-113.
  28. A. Tipek, P. Ripka, E. Hulicius, A. Hospodková, P. Neužil
    New Technologies and Materials
    Chapter in “Modern Sensors Handbook” edited by P. Ripka and A. Tipek, ISTE Ltd, 2007 London
  29. V. Křápek, K. Kuldová, J. Oswald, A. Hospodková, E. Hulicius, J. Humlíček
    Elongation of InAs/GaAs quantum dots from magnetophotoluminescence measurements
    Applied Physics Letters 89 (2006) 153108-1-153108-3.
  30. K. Kuldová, V. Křápek, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, E. Hulicius, M. Potemski, J. Humlíček
    1.3$\mu$m emission from InAs/GaAs quantum dots
    physica status solidi (c) 3 (2006) 3811-3814.
  31. K. Kuldová, V. Křápek, A. Hospodková, O. Bonaventurová-Zrzavecká, J. Oswald, E. Hulicius, J. Humlíček
    Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
    Materials Science and Engineering: C-Biomimetic and Supramolecular Systems 26 (2006) 983-986.
  32. K. D. Moiseev, E. V. Ivanov, G. G. Zegrya, M. P. Mikhailova, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, K. Melichar, T. Šimeček
    Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy
    Applied Physics Letters 88 (2006) 132102-1-132102-3.
  33. A. Tipek, P. Ripka, E. Hulicius, A. Hospodková, P. Neužil
    New technologies and materials
    Master Book on Sensors, eds. P. Ripka, A. Tipek, ISBN 80-7300-129-2, 2004, pp. 11-1 - 11-74