1. T.Vaněk, A. Hospodková, F. Hájek, K. Blažek, T. Hubáček, F. Dominec
    Luminescent epitaxial structure and way of preparation
  2. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, V. Jarý
    Technology of preparation of thick InGaN/GaN layers
  3. T. Hubáček, A. Hospodková
    FW03010298-V24: GaN buffer layers on YAP, GaGG
  4. T. Hubáček, A. Hospodková
    FW03010298-V25: Nitride heterostructure for ionized radiation imaging
  5. T. Hubáček, A. Hospodková
    Functional sample - fast decay scintillator based on InGaN/GaN multiple quantum wells
  6. T. Hubáček, A. Hospodková
    Preparation of functional InGaN/GaN heterostructure on sapphire substrate
  7. A. Hospodková, T. Hubáček
    Preparation method of epitaxial structure with InGaN quantum wells
  8. A. Hospodková, F. Dominec
    GaN based epitaxial multilayer structure for high electron mobility transistors and transistor containing this structure
  9. A. Hospodková, M. Slavická Zíková
    Multilayer semiconductor structure for photoelectric devices
  10. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  11. A. Hospodková, M. Slavická Zíková, K. Blažek
    Scintillation detector for detection of ionisation radiation
  12. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  13. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  14. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection ionising radiation
  15. A. Hospodková, J. Pangrác, J. Oswald
    Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots