Laboratoř pro Si:H depozice

  1. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  2. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of chrge carrier transport in mc-Si:H/a-Si:H superlattices
    Mater. Sci. Forum 384-385 (2002) 301 - 304
  3. G. Juška, K. Arlauskas, N. Nekrašas, J. Stuchlík, X. Niquille, N. Wyrch
    Features of Charge carrier transport determined from carrier extraction current in uc-Si:H.
    J. Non-Cryst. Solids 299-302 (2002) 375 - 379
  4. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.
  5. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  6. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  7. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  8. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  9. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  10. V. Cech, J. Stuchlík
    Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.
    phys. status solidi a 187 (2001) 487 - 491
  11. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
    in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
  12. A. Fejfar, B. Rezek, P. Knápek, J. Stuchlík, J. Kočka
    Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.
    J. Non-Cryst. Solids 266-269 (2000) 309 - 314
  13. M. Vanecek, J. Kočka, J. Stuchlík, Z. Kožíšek, O. Stika, A. Triska
    Density of the gap states in undoped and doped glow discharge a-Si:H.
    Solar Energy Materials 8 (1983) 411-423.