1. O. Romanyuk, F. Grosse, A. Proessdorf, W. Braun, H. Riechert
    Stabilization of semiconductor surfaces by configurational entropy.
    Physical Review B 82 (2010) 125315-1-125315-5.
  2. O. Romanyuk, W. Braun, F. Grosse
    Ab Initio Study of GaSb(001)-c(2 x 10) and (2 x 10) Reconstructions
    e-Journal of Surface Science and Nanotechnology 7 (2009) 429-431.
  3. O. Romanyuk, F. Grosse, W. Braun
    Stoichiometry and Bravais lattice diversity: An ab initio study of the GaSb(001) surface
    Physical Review B 79 (2009) 235330(1)-235330(6).
  4. O. Romanyuk, I. Bartoš
    Electron attenuation anisotropy at crystal surfaces from LEED.
    Surface Science 603 (2009) 2789-2792.
  5. S. Hajati, O. Romanyuk, J. Zemek, S. Tougaard
    Validity of Yubero-Tougaard theory to quantitatively determine the dielectric properties of surface nanofilms
    Physical Review B 77 (2008) 155403(1)-155403(11).
  6. B.P. Tinkham, O. Romanyuk, W. Braun, K.H. Ploog, F. Grosse, M. Takahasi, T. Kaizu, J. Mizuki
    GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction
    Journal of Electronic Materials 37 (2008) 1793-1798.
  7. O. Romanyuk, V. M. Kaganer, R. Shayduk, B. P. Tinkham, W. Braun
    Staircase model of GaSb(001) (1x3) and c(2x6) phases
    Physical Review B 77 (2008) 235322(1)-235322(5).
  8. O. Romanyuk, K.Kataoka, F.Matsui, K.Hattori, H.Daimon
    Structure analysis of thin iron-silicide film from φ-scan RHEED Patterson function
    Czechoslovak Journal of Physics 56 (2006) 267-276.
  9. O. Romanyuk, P. Jiříček, M. Cukr, I. Bartoš
    LEED structural analysis of GaAs(0 0 1) - c(4 x 4) surface
    Surface Science 566-568 (2004) 89-93.
  10. O. Romanyuk, P. Jiříček, M. Cukr, I. Bartoš
    GaAs(100)-(1x1)structure analysis from LEED intensities
    Czechoslovak Journal of Physics 53 (2003) 49-54.