1. M. Buryj, Z. Remeš, V. Babin, S. Chertopalov, K. Děcká, F. Dominec, J. Mičová, N. Neykova
    Free-standing ZnO:Mo nanorods exposed to hydrogen or oxygen plasma: Influence on the intrinsic and extrinsic defect states
    Materials 15 (2022) 2261(1)-2261(18).
  2. J. Stránská Matějová, A. Hospodková, T. Košutová, T. Hubáček, M. Hývl, V. Holý
    V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
    Journal of Physics D: Applied Physics 55 (2022) 255101(1)-255101(15).
  3. T. Vaněk, V. Jarý, T. Hubáček, F. Hájek, K. Kuldová, Z. Gedeonová, V. Babin, Z. Remeš, M. Buryj
    Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping
    Journal of Alloys and Compounds 914 (2022) 165255-.
  4. M. Buryj, V. Babin, T. Hubáček, V. Jarý, F. Hájek, K. Kuldová, A. Artemenko, A. Hospodková
    The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study
    Radiation Measurements 157 (2022) 106842-.
  5. A. Hospodková, J. Čížek, F. Hájek, T. Hubáček, J. Pangrác, F. Dominec, K. Kuldová, J. Batysta, M.O. Liedke, E. Hirschmann, M. Butterling, A. Wagner
    Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
    Materials 15 (2022) 6916(1)-6916(13).
  6. M. Buryj, V. Babin, T. Hubáček, V. Jarý, F. Hájek, K. Kuldová, Z. Remeš, A. Hospodková
    Optical properties of epitaxially grown GaN:Ge thin films
    Optical Materials: X 16 (2022) 100211(1)-100211(6).
  7. M. Buryj, T. Hubáček, F. Hájek, V. Jarý, V. Babin, K. Kuldová, T. Vaněk
    Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells
    Journal of Physics: Conference Series 2413 (2022) 1-9.
  8. Y. Tratsiak, E. Trusova, M. Buryj, V. Babin, F. Dominec, F. Hájek, G. Malashkevich
    The Effect of Be Co-Doping on Luminescence Properties of Gd3Al3Ga2O12:Ce Glass Ceramics
    physica status solidi (a) 219 (2022) 2200043(1)-2200043(6).