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  4. Division of Solid State Physics
  5. Department of Semiconductors
  6. MOVPE laboratory
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MOVPE laboratory

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  1. T. Hubáček, A. Hospodková
    Preparation of functional InGaN/GaN heterostructure on sapphire substrate
  2. A. Hospodková, T. Hubáček
    Preparation method of epitaxial structure with InGaN quantum wells
  3. A. Hospodková, F. Dominec
    GaN based epitaxial multilayer structure for high electron mobility transistors and transistor containing this structure
  4. A. Hospodková, M. Slavická Zíková
    Multilayer semiconductor structure for photoelectric devices
  5. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  6. A. Hospodková, M. Slavická Zíková, K. Blažek
    Scintillation detector for detection of ionisation radiation
  7. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  8. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection of ionising radiation
  9. A. Hospodková, K. Blažek, E. Hulicius, J. Touš, M. Nikl
    Scintillation detector for detection ionising radiation
  10. A. Hospodková, J. Pangrác, J. Oswald
    Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots
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