Main focus of my research in FZU are nitride-based semiconductors, namely GaN, InGaN and AlGaN. My work mostly consists of preparation of epitaxial layers using metal-organic vapor-phase epitaxy (MOVPE). Nitride-based structures are used e. g. in blue light emitting diodes found in everyday life. I am involved in a new application of such structures, namely scintillation detectors, with an advantage of higher efficiency and faster decay time as compared to conventional scintillators. Another field of research of our group are AlGaN/GaN structures used in high-powered transistors (HEMT - high electron mobility transistor).

ORCID 0000-0003-0725-484X 
Researchgate Tomas_Hubacek