Name Provider and programme Investigator from FZU Year of commencement Year of completion
Metal vacancies, their complexes and clusters in nitride semiconductors (VACCINES) running GACR » International Lead Agency Ing. Alice Hospodková, Ph.D. 2022 2024
Development of E-mode III-Nitride devices for Energy Optimized Agile Power Electronics MEYS » INTER-ACTION Ing. Alice Hospodková, Ph.D. 2020 2022
Fast displaying screens for detection of ionizing, UV, EUV radiation TACR » EPSILON Ing. Alice Hospodková, Ph.D. 2017 2020
New semiconductor heterostructures for advanced electronic applications TACR » EPSILON Ing. Alice Hospodková, Ph.D. 2017 2020
Nitride heterostructures for fast detection of ionizing radiation GACR » Standard Ing. Alice Hospodková, Ph.D. 2016 2019
Laboratory for preparation and characterization of nitride semiconductor heterostructures (LABONIT) ESIF » OP Prague Competitiveness Ing. Alice Hospodková, Ph.D. 2014 2015
Nano-heterostructures based on GaSb with deep QW GACR » Standard prof. Ing. Eduard Hulicius, CSc. 2013 2015
Heterostructures and nanostructures of III-V semiconductors for new electonic nad photonic applications MEYS » Mobility prof. Ing. Eduard Hulicius, CSc. 2012 2013
Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores GACR » Standard prof. Ing. Eduard Hulicius, CSc. 2010 2012
Quantum dots for detectors and other devices (QD) GACR » Standard prof. Ing. Eduard Hulicius, CSc. 2010 2012
Characterization of Low Defect Density Native Gallium Nitride Materials Other programs » Other International Programs prof. Ing. Eduard Hulicius, CSc. 2008 2011