1. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  2. D. Nohavica, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, Z. Jarchovský
    Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
    International Journal of Nanotechnology 9 (2012) 732-745.
  3. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, N. D. Stoyanov, G. G. Zegrya, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, M. Slavická Zíková
    Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
    Journal of Applied Physics 112 (2012) 023108(1)-023108(5).
  4. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  5. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  6. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  7. K. Kuldová, M. Molas, J. Borysiuk, A. Babiński, Z. Výborný, J. Pangrác, J. Oswald
    Quantum confinement in MOVPE-grown structures with selfassembled InAs/GaAs quantum dots
    Journal of Physics: Conference Series 245 (2010) 01207(1)-01207(4).
  8. J. Oswald, P. Hazdra, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác, J. Vyskočil
    Electro- and photoluminescence of InAs/GaAs quantum dot structures
    Journal of Physics: Conference Series 245 (2010) 012080(1)-012080(4).
  9. M. Fulem, P. Morávek, J. Pangrác, E. Hulicius, T. Šimeček, K. Růžička, V. Růžička, B. Kozyrkin, V. Shatunov
    Vapor Pressure of Trimethylantimony and tert-Butyldimethylantimony
    Journal of Chemical & Engineering Data 55 (2010) 362-365.
  10. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.
  11. M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
    Semiconductors 44 (2010) 66-71.
  12. K. Moiseev, E. Ivanov, V. Romanov, M. Mikhailova, Y. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
    Physics Procedia 3 (2010) 1189-1193.
  13. A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, O.Caha
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 312 (2010) 1383-1387.
  14. P. Morávek, M. Fulem, K. Růžička, J. Pangrác, E. Hulicius, T. Šimeček, V. Růžička, S.A. Rushworth
    Vapor Pressure of Tetrakis(dimethylamino)germanium
    Journal of Chemical & Engineering Data 55 (2010) 4095-4097.
  15. M. Fulem, K. Růžička, P. Morávek, J. Pangrác, E. Hulicius, B. Kozyrkin, V. Shatunov
    Vapor Pressure of Selected Organic Iodides
    Journal of Chemical & Engineering Data 55 (2010) 4780-4784.
  16. J. Vaniš, J. Zelinka, V. Malina, M. Henini, J. Pangrác, K. Melichar, E. Hulicius, F. Šroubek, J. Walachová
    Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE
    Microelectronics Journal 40 (2009) 496-498.
  17. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
    Superlattices and Microstructures 46 (2009) 324-327.
  18. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, J. Vyskočil, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures emitting in the 1.55 μm band.
    IOP Conference Series: Materials Science and Engineering 6 (2009) 012007-1-012007-4.
  19. J. Walachová, J. Zelinka, V. Malina, J. Vaniš, F. Šroubek, J. Pangrác, K. Melichar, E. Hulicius
    Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs/AlGaAs heterostructure
    Applied Physics Letters 92 (2008) 012101(1)-012101(3).
  20. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  21. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  22. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  23. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.
  24. J. Pangrác, M. Fulem, E. Hulicius, K. Melichar, T. Šimeček, K. Růžička, P. Morávek, V. Růžička, S.A. Rushworth
    Vapor pressure of germanium precursors
    Journal of Crystal Growth 310 (2008) 4720-4723.
  25. A. Hospodková, V. Křápek, T. Mates, K. Kuldová, J. Pangrác, E. Hulicius, J. Oswald, K. Melichar, J. Humlíček, T. Šimeček
    Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
    Journal of Crystal Growth 298 (2007) 570-573.
  26. A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, T. Mates, K. Kuldová, K. Melichar, T. Šimeček
    Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
    Journal of Crystal Growth 298 (2007) 582-585.
  27. A. Hospodková, V. Křápek, K. Kuldová, J. Humlíček, E. Hulicius, J. Oswald, J. Pangrác, J. Zeman
    Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
    Physica E: Low-dimensional Systems and Nanostructures 36 (2007) 106-113.
  28. J. Walachová, J. Zelinka, V. Malina, J. Vaniš, F. Šroubek, J. Pangrác, K. Melichar, E. Hulicius
    Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
    Applied Physics Letters 91 (2007) 042110-1-042110-3.
  29. P. Hazdra, J. Voves, E. Hulicius, J. Pangrác, Z. Šourek
    Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy
    Applied Surface Science 253 (2006) 85-89.
  30. K. Kuldová, V. Křápek, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, E. Hulicius, M. Potemski, J. Humlíček
    1.3$\mu$m emission from InAs/GaAs quantum dots
    physica status solidi (c) 3 (2006) 3811-3814.
  31. F. Dubecký, E. Hulicius, P. Frigeri, A. Perd´ochová-Šagátová, B. Zat´ko, P. Hubík, E. Gombia, P. Boháček, J. Pangrác, S. Franchi, V. Nečas
    Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode
    Nuclear Instruments and Methods in Physics Research A 563 (2006) 159-162.
  32. M. Fulem, K. Růžička, V. Růžička, T. Šimeček, E. Hulicius, J. Pangrác
    Vapour pressure measurement of metal organic precursors used for MOVPE
    Journal of Chemical Thermodynamics 38 (2006) 312-322.
  33. D. Kindl, P. Hubík, J. Krištofik, J. J. Mareš, E. Hulicius, J. Pangrác, K. Melichar, Z. Výborný, J. Toušková
    Transport-controlling deep defects in MOVPE grown GaSb
    Semiconductor Science and Technology 21 (2006) 180-183.
  34. K. D. Moiseev, E. V. Ivanov, G. G. Zegrya, M. P. Mikhailova, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, K. Melichar, T. Šimeček
    Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy
    Applied Physics Letters 88 (2006) 132102-1-132102-3.
  35. P. Hazdra, J. Voves, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown $\delta$-InAs layers in GaAs
    physica status solidi (c) 2 (2005) 1319-1324.
  36. S. Civiš, V. Horká, T. Šimeček, E. Hulicius, J. Pangrác, J. Oswald, O. Petříček, Y. Rouillard, C. Alibert, R. Werner
    GaSb based lasers operating near 2.3 µm for high resolution absorption spectroscopy
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 61 (2005) 3066-3069.
  37. J. Oswald, J. Pangrác, E. Hulicius, T. Šimeček, K.D. Moiseev, M.P. Mikhailova, Yu.P. Yakovlev
    Electroluminescence of type II broken gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs heterostructures with high mobility electron channel at the interface
    Journal of Applied Physics 98 (2005) 083512-1-083512-5.
  38. S. Civiš, V. Horká, J. Cihelka, T. Šimeček, E. Hulicius, J. Oswald, J. Pangrác, A. Vicet, Y. Rouillard, A. Salhi, C. Alibert, R. Werner, J. Koeth
    Room temperature diode laser photoaccoustic spectroscopy near 2.3 µm
    Applied Physics B: Laser and Optics 81 (2005) 857-861.
  39. M. Fulem, K. Růžička, V. Růžička, T. Šimeček, E. Hulicius, J. Pangrác
    Vapour pressure and heat capacities of metal organic precursors Y(thd)3 and Zr(thd)4
    Journal of Crystal Growth 264 (2004) 192-200.
  40. J. Toušek, J. Toušková, E. Hulicius, T. Šimecek, J. Pangrác, K. Melichar, Z. Výborný, V. Jurka V.
    Influence of photon recycling on photovoltage spectra of GaSb diodes
    Journal of Applied Physics 95 (2004) 5104-5110.
  41. M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, J. Pangrác, S.A. Rushworth, L.M. Smith
    Measurement of vapour pressure of In-based metalorganics for MOVPE
    Journal of Crystal Growth 272 (2004) 42-46.
  42. D. Kindl, J. Toušková, E. Hulicius, J. Pangrác, T. Šimeček, V. Jurka, P. Hubík, J. J. Mareš, J. Krištofik
    Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy
    Journal of Applied Physics 95 (2004) 1811-1815.
  43. M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, K. Melichar, J. Pangrác, S. A. Rushworth, L. M. Smith
    Vapor pressure of metal organic precursors
    Journal of Crystal Growth 248 (2003) 99-107.
  44. P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček
    InAs $\delta$-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
    Journal of Crystal Growth 248 (2003) 328-332.
  45. J. Toušková, D. Kindl, E. Samochin, J. Toušek, E. Hulicius, J. Pangrác, T. Šimeček, Z. Výborný
    Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE
    Solar Energy Materials and Solar Cells 76 (2003) 135-145.
  46. K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, J. Oswald, E. Hulicius, J. Pangrác, T.Šimeček
    Electroluminescence in a Semimetal Channel at a Single Broken-Gap Heterointerface of Type II
    Semiconductors, 37, 1185 - 1189 (2003).
  47. J. Toušková, D. Kindl, B. Blahitka, J. Toušek, E. Hulicius, J. Pangrác, E. Samochin, T. Šimeček, Z. Výborný
    Current-voltage characteristics of GaSb homojunctions prepared by MOVPE
    Solid-State Electronics 47 (2003) 1471-1478.
  48. J. Vaniš, D.H. Chow, J. Pangrác, F. Šroubek, T.C. McGill, J. Walachová
    Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode
    phys. status solidi c 0 (2003) 986 - 991