Profile

  • Design of InGaN/GaN heterostructures with application in scintillators
  • Nextnano simulations of heterostructures with different structure parameters (compositions and thicknesses of layers, combination of different materials and such)
  • Technological preparation by metalorganic vapor phase epitaxy
  • Evaluation of results obtained from various characterization techniques (photoluminescence, cathodoluminescence, various types of microscopy and such)
ORCID: 0000-0001-7484-882X