1. T. Hubáček, K. Kuldová, Z. Gedeonová, F. Hájek, T. Košutová, S. Banerjee, P. Hubík, J. Pangrác, T. Vaněk, A. Hospodková
    Impact of Ge doping on MOVPE grown InGaN layers
    Journal of Crystal Growth 604 (2023) 127043(1)-127043(5).
  2. A. Hospodková, F. Hájek, T. Hubáček, Z. Gedeonová, P. Hubík, J. J. Mareš, J. Pangrác, F. Dominec, K. Kuldová, E. Hulicius
    Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters
    Journal of Crystal Growth 605 (2023) 127061-1-127061-7.
  3. A. Hospodková, F. Hájek, T. Hubáček, Z. Gedeonová, P. Hubík, M. Hývl, J. Pangrác, F. Dominec, T. Košutová
    Electron Transport Properties in HEMT structures improved by V-pit formation on AlGaN/GaN interface
    ACS Applied Materials and Interfaces 15 (2023) 19646-19652.
  4. F. Hájek, V. Jarý, T. Hubáček, F. Dominec, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, T. Vaněk, M. Buryj, G. Ledoux, C. Dujardin
    Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn
    ECS Journal of Solid State Science and Technology 12 (2023) 066004-.
  5. D. Miliaieva, A. Sokeng-Djoumessi, J. Čermák, K. Kolářová, M. Schaal, F. Otto, E. Shagieva, O. Romanyuk, J. Pangrác, J. Kulíček, V. Nádaždy, Š. Stehlík, A. Kromka, H. Hoppe, B. Rezek
    Absolute energy levels in nanodiamonds of different origins and surface chemistries
    Nanoscale Advances 5 (2023) 4402-4414.
  6. A. Hospodková, J. Čížek, F. Hájek, T. Hubáček, J. Pangrác, F. Dominec, K. Kuldová, J. Batysta, M.O. Liedke, E. Hirschmann, M. Butterling, A. Wagner
    Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
    Materials 15 (2022) 6916(1)-6916(13).
  7. Š. Stehlík, J. Henych, P. Hrmová, R. Král, P. Zemenová, J. Pangrác, O. Vaněk, A. Kromka, B. Rezek
    Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation
    Carbon 171 (2021) 230-239.
  8. F. Hájek, A. Hospodková, T. Hubáček, J. Oswald, J. Pangrác, F. Dominec, R. Horešovský, K. Kuldová
    Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
    Journal of Luminescence 236 (2021) 118127(1)-118127(5).
  9. T. Vaněk, F. Hájek, F. Dominec, T. Hubáček, K. Kuldová, J. Pangrác, T. Košutová, P. Kejzlar, P. Bábor, A. Lachowski, A. Hospodková
    Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
    Journal of Crystal Growth 565 (2021) 126151(1)-126151(6).
  10. F. Hájek, A. Hospodková, P. Hubík, Z. Gedeonová, T. Hubáček, J. Pangrác, K. Kuldová
    Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
    Semiconductor Science and Technology 36 (2021) 075016(1)-075016(9).
  11. T. Hubáček, A. Hospodková, K. Kuldová, M. Slavická Zíková, J. Pangrác, J. Čížek, M.O. Liedke, M. Butterilng, A. Wagner, P. Hubík, E. Hulicius
    Improvement of luminescence properties of n-GaN using TEGa precursor
    Journal of Crystal Growth 531 (2020) 125383(1)-125383(7).
  12. A. Hospodková, F. Hájek, J. Pangrác, M. Slavická Zíková, T. Hubáček, K. Kuldová, J. Oswald, T. Vaněk, A. Vetuško, J. Čížek, M.O. Liedke, M. Butterling, A. Wagner
    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
    Journal of Crystal Growth 536 (2020) 125579(1)-125579(6).
  13. M. Slavická Zíková, A. Hospodková, J. Pangrác, T. Hubáček, J. Oswald, K. Kuldová, F. Hájek, G. Ledoux, C. Dujardin
    Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
    Journal of Crystal Growth 506 (2019) 8-13.
  14. F. Dominec, A. Hospodková, T. Hubáček, M. Slavická Zíková, J. Pangrác, K. Kuldová, A. Vetuško, E. Hulicius
    Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
    Journal of Crystal Growth 507 (2019) 246-250.
  15. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác, M. Slavická Zíková, F. Hájek, F. Dominec, N. Florini, Ph. Komninou, G. Ledoux, C. Dujardin
    Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
    Journal of Crystal Growth 507 (2019) 310-315.
  16. T. Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, V. Jarý, F. Dominec, M. Slavická Zíková, F. Hájek, E. Hulicius, A. Vetuško, G. Ledoux, Ch. Dujardin, M. Nikl
    Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
    CrystEngComm 21 (2019) 356-362.
  17. A. Hospodková, M. Slavická Zíková, T. Hubáček, J. Pangrác, K. Kuldová, F. Hájek, F. Dominec, A. Vetuško, S. Hasenöhrl
    Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
    Lithuanian Journal of Physics 59 (2019) 179-186.
  18. A. Hospodková, T. Hubáček, J. Oswald, J. Pangrác, K. Kuldová, M. Hývl, F. Dominec, G. Ledoux, Ch. Dujardin
    InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
    physica status solidi (b) 255 (2018) 1700464(1)-1700464(5).
  19. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  20. A. Hospodková, E. Hulicius, J. Pangrác, F. Dominec, M.P. Mikhailova, A.I. Veinger, I.V. Kochman
    InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
    Journal of Crystal Growth 464 (2017) 206-210.
  21. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  22. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  23. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  24. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  25. M.P. Mikhailova, V.A. Berezovets, R.V. Parfeniev, L.V. Danilov, M.O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius
    Vertical Transport in Type-II Heterojunctions with InAs/GaSb/AlSb Composite Quantum Wells in a High Magnetic Field
    Semiconductors 51 (2017) 1343-1349.
  26. Š. Stehlík, M. Varga, P. Hrmová, L. Ondič, M. Ledinský, J. Pangrác, O. Vaňek, J. Lipov, A. Kromka. B Rezek
    Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds
    ACS Applied Materials and Interfaces 9 (2017) 38842-38853.
  27. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  28. A. Hospodková, J. Oswald, J. Pangrác, K. Kuldová, M. Slavická Zíková, J. Vyskočil, E. Hulicius
    Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
    Physica B: Condensed Matter 480 (2016) 14-22.
  29. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Vyskočil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou
    The Metalorganic Vapour Phase Epitaxy Growth of AIIIBV Heterostructures Observed by Reflection Anisotropy Spectroscopy
    Acta Physica Polonica A 129 (2016) A-75-A-78.
  30. M.P. Mikhaliova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells
    Proceedings of SPIE 9755 (2016) 97552R(1)-97552R(1).
  31. M.P. Mikhailova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, M.O. Safonchik, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells
    Journal of Nanophotonics 10 (2016) 046013(1)-046013(8).
  32. I.V. Kochman, A.I. Veinger, M.P. Mikhailova, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovetz, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption by 2D-electrons in the type II composite InAs/GaSb/AlSb quantum wells in a magnetic field
    Journal of Physics: Conference Series 769 (2016) 012075(1)-012075(6).
  33. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, P. Krčil, E. Hulicius, Ph. Komninou, J. Kioseoglou
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Journal of Crystal Growth 414 (2015) 167-171.
  34. J. Vyskočil, P. Gladkov, O. Petříček, A. Hospodková, J. Pangrác
    Growth and properties of AIIIBV QD structures for intermediate band solar cells
    Journal of Crystal Growth 414 (2015) 172-176.
  35. A. Hospodková, J. Pangrác, J. Vyskočil, M. Slavická Zíková, J. Oswald, Ph. Komninou, E. Hulicius
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
    Journal of Crystal Growth 414 (2015) 156-160.
  36. M. Mikhailova, E. Ivanov, L. Danilov, A. Petukhov, K. Kalinina, N. Stoyanov, Y. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well
    Proceedings of SPIE 9450 (2015) 94500J-94500J.
  37. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  38. G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou
    Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
    Applied Surface Science 306 (2014) 89-93.
  39. Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius
    Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
    Journal of Crystal Growth 396 (2014) 54-60.
  40. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  41. P. Morávek, J. Pangrác, M. Fulem, E. Hulicius, K. Růžička
    Vapor pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum
    Journal of Chemical & Engineering Data 59 (2014) 4179-4183.
  42. M. Pokorný, M. Kozák, F. Trojánek, J. Pangrác, A. Hospodková
    Type-I InAs quantum dots covered by GaAsSb strain reducing layer
    Proceedings of SPIE 9161 (2014) 916113(1)-916113(4).
  43. M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác
    Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy
    Semiconductors 47 (2013) 1041-1045.
  44. M. P. Mikhailova, L. V. Danilov, K. V. Kalinina, E. V. Ivanov, N. D. Stoyanov, G. G. Zegrya, Y. P. Yaklovev, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
    Chapter in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 105-131 (2013), ISBN: 0819495964.
  45. P. Morávek, M. Fulem, J. Pangrác, E. Hulicius, K. Růžička
    Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony
    Fluid Phase Equilibria 360 (2013) 106-110.
  46. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  47. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, K. Kuldová, J. Vyskočil, E. Hulicius
    Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 370 (2013) 303-306.
  48. J. Walachová, J. Zelinka, S. Leshkov, F. Šroubek, J. Pangrác, E. Hulicius, J. Vaniš
    Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state
    Physica E: Low-dimensional Systems and Nanostructures 48 (2013) 61-65.
  49. J. Grym, D. Nohavica, P. Gladkov, E. Hulicius, J. Pangrác, K. Piksová
    Epitaxial growth on porous GaAs substrates
    Comptes Rendus Chimie 16 (2013) 59-64.
  50. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).