RNDr. Jiří Pangrác Category Research and Development Specialist Division (no.) Division of Solid State Physics (3) Department (no.) Department of Semiconductors (14) Laboratory / Scientific group MOVPE laboratory (1404) Telephone +420 220 318 584 E-mail pangrac [at] fzu.cz Locality Cukrovarnická Room F 104
Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface Image
Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers Image
Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design Image
GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD Image
Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition Image
