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  3. RNDr. Jiří Pangrác
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RNDr. Jiří Pangrác

Category
Research and Development Specialist
Division (no.)
Division of Solid State Physics (3)
Department (no.)
Department of Semiconductors (14)
Laboratory / Scientific group
MOVPE laboratory (1404)
Telephone
+420 220 318 584
E-mail
pangrac [at] fzu.cz
Locality
Cukrovarnická
Room
F 107
  • Profile
  • Results (your current location)
  • Publications
  • Patents

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Image
GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Image
Dep14_CrystEngCom_Fig1.png

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Image
pssB 255 2018 1700464

GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Image
MatResExpr_Fig1.jpg

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Image
Dep14_QD InAs_GaAsSb.png

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