Skip to main content
Home Home We are celebrating 70 years
FZU
Contacts
  • Facebook
  • Twitter
  • Instagram
  • Youtube

User account menu

  • Log in
  • Čeština

Main navigation

  • Research
    • Research Divisions and Departments
    • Organizational Chart
    • Research Areas and Topics
    • Significant Results
    • Publications
    • Projects
    • Joint Laboratories
    • Collaborating Institutions
    • News from Research
  • People
  • Services
    • Research support
    • For Businesses
    • Expertise and Knowledge
    • Patents and Licences
    • Equipment and Technologies
    • Opportunities for Cooperation
    • References
  • News
  • Events
  • Popularization
    • Public Events
    • For Schools
    • Online Presentations
    • Journals and Web Sites
    • Virtual Tour
    • Popular Articles
  • Career
    • Join Us
    • For Students
    • Why FZU?
    • Career Development
    • Welcome office
    • Contact Us
  • About FZU
    • Contact
    • Organizational Structure
    • FZU Management
    • Institute Council
    • International Advisory Board
    • Supervisory Board of FZU
    • FZU Activities
    • History of FZU
    • Official Noticeboard
    • Media Relations
  • Čeština

User account menu

  • Log in

Breadcrumb

  1. Home
  2. People
  3. RNDr. Jiří Pangrác
  4. Results

RNDr. Jiří Pangrác

Category
Research and Development Specialist
Division (no.)
Division of Solid State Physics (3)
Department (no.)
Department of Semiconductors (14)
Laboratory / Scientific group
MOVPE laboratory (1404)
Telephone
+420 220 318 584
E-mail
pangrac [at] fzu.cz
Locality
Cukrovarnická
Room
F 107
  • Profile
  • Results (your current location)
  • Publications
  • Patents

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Image
GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Image
Dep14_CrystEngCom_Fig1.png

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Image
pssB 255 2018 1700464

GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Image
MatResExpr_Fig1.jpg

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Image
Dep14_QD InAs_GaAsSb.png

Don’t miss anything!

Subscribe to get exciting news from the world of physics.

This is required.
Information about personal data processing

Patička - Typ uživatele

  • For Students
  • For Businesses
  • Public events

Footer

  • Personal data protection
  • Cookies policy

Externí odkazy patička

  • Czech Academy of Sciences
  • Facebook
  • Twitter
  • Instagram
  • Youtube

Institute of Physics of the Czech Academy of Sciences
Na Slovance 1999/2, 182 00 Prague 8 more >

© 1998 – 2023 Copyright © Fyzikální ústav AV ČR, v. v. i.