prof. Ing. Eduard Hulicius, CSc.
Laboratory / Scientific group
+420 220 318 576
hulicius [at] fzu.cz
Semiconductor lasers, LEDs, and laser structures mainly for mid-infrared wavelengths.
GaN based scintillators and HEMTs. Epitaxial techniques (from LPE and MBE to MOVPE, currently) for preparation of hetero-nano-structures for quantum wells and quantum dots from III/V elements (namely InAs/GaAs a In(Al,Ga)N/GaN). Characterizations of optical, electrical, and structural properties of semiconductors with respect to practical applications.