1. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, K. Kuldová, J. Vyskočil, E. Hulicius
    Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 370 (2013) 303-306.
  2. B. Frumarová, M. Frumar, J. Oswald, M. Kincl, V. Parchanski
    Preparation and physical properties of luminescent 80GeSe2.(20-x)Sb2Se3.xSb2Tey:Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4
    Journal of Luminescence 134 (2013) 558-565.
  3. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).
  4. P. Hazdra, J. Oswald, A. Hospodková, E. Hulicius, J. Pangrác
    Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
    Thin Solid Films 543 (2013) 83-87.
  5. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  6. P. Nekvindová, J. Cajzl, B. Švecová, A. Macková, P. Malinský, J. Oswald, J. Vacík, J. Špirková
    Erbium diffusion from erbium metal or erbium oxide layers deposited on the surface of various LiNbO3 cuts
    Optical Materials 36 (2013) 402-407.
  7. M. Jelínek, J. Oswald, T. Kocourek, K. Rubešová, P. Nekvindova, D. Chvostová, A. Dejneka, V. Železný, V. Studnička, K. Jurek
    Optical properties of laser-prepared Er-and Er,Yb-doped LiNbO3 waveguiding layers
    Laser Physics 23 (2013) 105819(1)-105819(5).