1. F. Hájek, V. Jarý, T. Hubáček, F. Dominec, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, T. Vaněk, M. Buryj, G. Ledoux, C. Dujardin
    Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn
    ECS Journal of Solid State Science and Technology 12 (2023) 066004-.
  2. T. Netolicky, L. Benes, K. Melanova, S. Slang, B. Frumarova, J. Oswald, T. Wagner
    Enhancement of photoluminescence properties in Er3+-doped Gd3ScxGa5-xO12 garnet nanocrystals by Sc3+ co-doping.
    Journal of Luminescence 263 (2023) 1-7.
  3. J. Šmejcký, V. Jeřábek, D. Mareš, J. Voves, P. Vařák, J. Cajzl, J. Oswald, V. Prajzler, P. Nekvindová
    Erbium–bismuth-doped germanium silicate active optic glass for broad-band optical amplification.
    Optical Materials 137 (2023) 1-10.
  4. T. Netolicky, L. Benes, K. Melanova, S. Slang, J. Oswald, T. Wagner
    Near-infrared emission in Ho3+-doped Yb3Ga5O12 garnet nanocrystals
    Journal of Luminescence 251 (2022) 1-6.
  5. P. Vařák, P. Nekvindová, J. Baborák, J. Oswald
    Near-infrared photoluminescence properties of Er/Yb- and Ho/Yb-doped multicomponent silicate glass – The role of GeO2, Al2O3 and ZnO
    Journal of Non-Crystalline Solids 582 (2022) 1-10.
  6. F. Hájek, A. Hospodková, T. Hubáček, J. Oswald, J. Pangrác, F. Dominec, R. Horešovský, K. Kuldová
    Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
    Journal of Luminescence 236 (2021) 118127(1)-118127(5).
  7. P. Vařák, P. Nekvindová, S. Vytykáčová, A. Michalcová, P. Malinský, J. Oswald
    Near-infrared photoluminescence enhancement and radiative energy transfer in RE-doped zinc-silicate glass (RE = Ho, Er, Tm) after silver ion exchange.
    Journal of Non-Crystalline Solids 557 (2021) 1-11.
  8. A. Hospodková, F. Hájek, J. Pangrác, M. Slavická Zíková, T. Hubáček, K. Kuldová, J. Oswald, T. Vaněk, A. Vetuško, J. Čížek, M.O. Liedke, M. Butterling, A. Wagner
    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
    Journal of Crystal Growth 536 (2020) 125579(1)-125579(6).
  9. P. Nekvindová, J. Cajzl, A. Macková, P. Malinský, J. Oswald, R. Böttger, R. Yatskiv
    Er implantation into various cuts of ZnO – experimental study and DFT modelling.
    Journal of Alloys and Compounds 111 (2020) 10-11.
  10. J. Cajzl, P. Nekvindová, K. Jeníčková, A. Jagerová, P. Malinský, Z. Remeš, N. Neykova, Y.Y. Chang, J. Oswald, U. Kentsch, A. Macková
    Erbium-ion implantation of single- and nano-crystalline ZnO
    Nuclear Instruments and Methods in Physics Research Section B 464 (2020) 65-73.
  11. P. Nekvindová, J. Cajzl, A. Macková, P. Malinský, J. Oswald, R. Böttger, R. Yatskiv
    Er implantation into various cuts of ZnO e experimental study and DFT modelling
    Journal of Alloys and Compounds 816 (2020) 1-14.
  12. A. Macková, P. Malinský, A. Jagerová, R. Mikšová, Z. Sofer, K. Klímová, M. Mikulics, R. Böttger, S. Akhmadaliev, J. Oswald
    Damage accumulation and implanted Gd and Au position in a- and c-plane GaN
    Thin Solid Films 680 (2019) 102-113.
  13. V. Jakeš, K. Rubešová, J. Havlíček, V. Polák, D. Sedmidubský, J. Oswald
    Preparation of Er-doped Yb3(Al, Fe)5O12 garnets
    Materials Science and Engineering 465 (2019) 1-7.
  14. V. Prokop, L. Střižík, J. Oswald, M. Vlček, L Beneš, S. N. Yannopoulos, B. Frumarová, T. Wágner
    1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass
    Pure and Applied Chemistry 111 (2019) 1-11.
  15. M. Slavická Zíková, A. Hospodková, J. Pangrác, T. Hubáček, J. Oswald, K. Kuldová, F. Hájek, G. Ledoux, C. Dujardin
    Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
    Journal of Crystal Growth 506 (2019) 8-13.
  16. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác, M. Slavická Zíková, F. Hájek, F. Dominec, N. Florini, Ph. Komninou, G. Ledoux, C. Dujardin
    Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
    Journal of Crystal Growth 507 (2019) 310-315.
  17. T. Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, V. Jarý, F. Dominec, M. Slavická Zíková, F. Hájek, E. Hulicius, A. Vetuško, G. Ledoux, Ch. Dujardin, M. Nikl
    Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
    CrystEngComm 21 (2019) 356-362.
  18. D. Himics, L. Strizik, J. Oswald, J. Holubová, L. Beneš, S. Slang, B. Frumanová, T. Wagner
    1.2 μm and 1.5 μm near-infrared photoluminescence and visible upconversion photoluminescence in GeGaS:Er3+/Ho3+ glasses under 980 nm excitation.
    Journal of Materials Science 29 (2018) 17314-17322.
  19. L. Střižík, S. N. Yannopoulos, V. Benekou, J. Oswald, M. Pavlista, V. Prokop, T. Wagner, J. Orava
    Photoluminescence in pulsed-laser deposited GeGaSbS:Er films.
    Optical Materials 85 (2018) 246-253.
  20. J. Cajzl, P. Nekvindová, A. Macková, P. Malinský, J. Oswald, Z. Remeš, M. Varga, A. Kromka, B. Akhetova, R. Böttger, V. Prajzler
    Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing
    Micromachines 9 (2018) 316-330.
  21. S. Vytykačová, S. Staněk, B. Švecová, M. Míka, J. Oswald, A. Macková, P. Malinský, R. Böttger, R. Yatskiv, P. Nekvindová
    The effect of zinc content on the enhancement Er3+ - Yb3+ luminescence properties in silicate glass matrix.
    Journal of Ceramics 62 (2018) 188-193.
  22. D. Mikolášová, K. Rubešová, V. Jakeš, P. Nekvindová, Z. Zlámalová Cílová, J. Oswald
    Water-soluble polymers as chelating agents for the deposition of Er3+/Yb3+:LiNbO3 waveguiding films
    Journal of Sol-Gel Science and Technology 86 (2018) 274-284.
  23. J. Cajzl, B. Akhetova, P. Nekvindová, A. Macková, P. Malinský, J. Oswald, Z. Remeš, M. Varga, A. Kromka
    Co-implantation of Er and Yb ions into single-crystalline and nano-crystalline diamond
    Surface and Interface Analysis 50 (2018) 1218-1223.
  24. A. Hospodková, T. Hubáček, J. Oswald, J. Pangrác, K. Kuldová, M. Hývl, F. Dominec, G. Ledoux, Ch. Dujardin
    InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
    physica status solidi (b) 255 (2018) 1700464(1)-1700464(5).
  25. S. Staněk, P. Nekvindová, B. Švecová, S. Vytykačová, M. Míka, J. Oswald, O. Barkman, J. Špirková
    The influence of silver ion exchange on the luminescence properties of Er-Yb silicate glasses.
    Optical Materials 72 (2017) 183-189.
  26. K. Rubešová, D. Mikolášová, T. Hlásek, V. Jakeš, P. Nekvindová, P. Matějka, M. Dendisová, Z. Zlámalová Cílová, J. Oswald
    Ageing of PVP/LiNbO3 solutions and its impact on the optical properties of Er3+/Yb3+:LiNbO3 waveguiding films
    Journal of Physics and Chemistry of Solids 111 (2017) 343-348.
  27. L. Střižík, T. Wágner, V. Weissová, J. Oswald, K. Palka, L. Beneš, M. Krbal, R. Jambor, C. Koughia, S. O. Kasap
    Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 lm photoluminescence activated by thermal treatment
    Journal of Materials Chemistry C 5 (2017) 8489-8497.
  28. D. Mikolášová, K. Rubešová, V. Jakeš, P. Nekvindová, L. Nádherný, J. Oswald
    Polyethylene glycol (PEG) used in the preparation of (Er3+/Yb3+):LiNbO3 waveguides
    Materials Science and Engineering 266 (2017) 1-6.
  29. V. Jakeš, V. Polák, K. Rubešová, T. Hlásek, D. Mikolášová, L. Nádherný, P. Nekvindová, J. Oswald
    Modification of Er:YbAG film microstructure with a sintering Agent
    Materials Science and Engineering 266 (2017) 2-8.
  30. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  31. J. Cajzl, P. Nekvindová, A. Macková, P. Malinský, D. Sedmidubský, M. Hušák, Z. Remeš, M. Varga, A. Kromka, R. Böttger, J. Oswald
    Erbium ion implantation into diamond – measurement and modelling of the crystal structure
    Physical Chemistry Chemical Physics 19 (2017) 6233-6245.
  32. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  33. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  34. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  35. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  36. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  37. A. Hospodková, J. Oswald, J. Pangrác, K. Kuldová, M. Slavická Zíková, J. Vyskočil, E. Hulicius
    Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
    Physica B: Condensed Matter 480 (2016) 14-22.
  38. T. Hlásek, V. Polák, K. Rubešová, V. Jakeš, P. Nekvindová, O. Jankovský, D. Mikolášová, J. Oswald
    Sol–gel-derived planar waveguides of Er3+:Yb3Al5O12 prepared by a polyvinylpyrrolidone-based method.
    Journal of Sol-Gel Science and Technology 80 (2016) 531-537.
  39. V. Jakeš, K. Rubešová, T. Hlásek, V. Polák, J. Oswald, L. Nádherný
    Thin films of ErNbO4 and YbNbO4 prepared by sol–gel.
    Journal of Sol-Gel Science and Technology 78 (2016) 600-605.
  40. T. Hlásek, K. Rubešová, V. Jakeš, M. Nováček, J. Oswald, P. Fitl, J. Siegel, P. Macháč
    Physical vapor deposition of Er3+: Yb3Al5O12 thin films from sol-gel derived targets
    CERAMICS-SILIKATY 60 (2016) 285-290.
  41. S. Staněk, P. Nekvindová B. Švecová, S. Vytykáčová, M. Míka, J. Oswald, A. Macková, P. Malinský, J. Špirková.
    The influence of silver-ion doping using ion implantation on the luminescence properties of Er–Yb silicate glasses
    Nuclear Instruments and Methods in Physics Research Section B 371 (2016) 350-354.
  42. J. Cajzl, P. Nekvindová, A. Macková, P. Malinský, J. Oswald, S. Staněk, S. Vytykáčová, J. Špirková.
    Optical waveguides in Er:LiNbO3 fabricated by different techniques – A comparison
    Optical Materials 53 (2016) 160-168.
  43. K. Rubešová, D.Mikolášová, T.Hlásek, V.Jakeš, P.Nekvindová, D.Bouša, J. Oswald
    WaveguidingEr3+/Yb3+:LiNbO3 films preparedbyasol–gel method using polyvinylpyrrolidone
    Journal of Luminescence 176 (2016) 260-265.
  44. P. Nekvindová, O. Babčenko, J. Cajzl, A. Kromka, A. Macková, P. Malinský, J. Oswald, V. Prajzler, Z. Remeš, M. Varga
    Ion-implantation of erbium into the nanocrystalline diamond thin films
    Journal of Optoelectronics and Advanced Materials 18 (2016) 679-684.
  45. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Vyskočil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou
    The Metalorganic Vapour Phase Epitaxy Growth of AIIIBV Heterostructures Observed by Reflection Anisotropy Spectroscopy
    Acta Physica Polonica A 129 (2016) A-75-A-78.
  46. F. Dubecký, J. Oswald, D. Kindl, P. Hubík, M. Dubecký, E. Gombia, A. Šagátová, P. Boháček. M. Sekáčová, V. Nečas
    Photocurrent spectra of semi-insulating GaAs M-S-M diodes: Role of the contacts
    Solid-State Electronics 118 (2016) 30-35.
  47. J. Stoulil, T. Prošek, A. Nazarov, J. Oswald, P. Kříž, D. Thierry
    Electrochemical properties of corrosion products formed on Zn-Mg, Zn-Al and Zn-Al-Mg coatings in model atmospheric conditions.
    Materials and Corrosion 66 (2015) 777-782.
  48. M. Mikhailova, E. Ivanov, L. Danilov, A. Petukhov, K. Kalinina, N. Stoyanov, Y. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well
    Proceedings of SPIE 9450 (2015) 94500J-94500J.
  49. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, P. Krčil, E. Hulicius, Ph. Komninou, J. Kioseoglou
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Journal of Crystal Growth 414 (2015) 167-171.
  50. A. Hospodková, J. Pangrác, J. Vyskočil, M. Slavická Zíková, J. Oswald, Ph. Komninou, E. Hulicius
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
    Journal of Crystal Growth 414 (2015) 156-160.