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  3. Ing. Jiří Oswald, CSc.
  4. Results

Ing. Jiří Oswald, CSc.

Photo
Image
RV1_7994.jpg
Category
Senior Scientist
Division (no.)
Division of Solid State Physics (3)
Department (no.)
Department of Semiconductors (14)
Laboratory / Scientific group
Group of Optical Spectroscopy (1408)
Telephone
+420 220 318 583
E-mail
oswald [at] fzu.cz
Locality
Cukrovarnická
Room
A 44/4
  • Profile
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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Image
GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Image
Dep14_CrystEngCom_Fig1.png

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Image
pssB 255 2018 1700464

Photoluminescence in pulsed-laser deposited GeGaSbS:Er films

Image
GaGaSbS_Er JOsw.png

GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Image
MatResExpr_Fig1.jpg

Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

Image
As3S7 JOsw.png

Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts

Image
Photocurrent spectrum in SI GaAs

InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

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Multiplexní InGaN/GaN kvantové jámy pro rychlé scintilátory: studium radioluminiscence a fotoluminiscence

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Image
Dep14_QD InAs_GaAsSb.png

Record wavelength emitted from InAs/GaAs quantum dots

Image
rekord_pl.jpg

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