1. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  2. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  3. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  4. J. Cajzl, P. Nekvindová, A. Macková, P. Malinský, D. Sedmidubský, M. Hušák, Z. Remeš, M. Varga, A. Kromka, R. Böttger, J. Oswald
    Erbium ion implantation into diamond – measurement and modelling of the crystal structure
    Physical Chemistry Chemical Physics 19 (2017) 6233-6245.
  5. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  6. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  7. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  8. S. Staněk, P. Nekvindová, B. Švecová, S. Vytykačová, M. Míka, J. Oswald, O. Barkman, J. Špirková
    The influence of silver ion exchange on the luminescence properties of Er-Yb silicate glasses.
    Optical Materials 72 (2017) 183-189.
  9. K. Rubešová, D. Mikolášová, T. Hlásek, V. Jakeš, P. Nekvindová, P. Matějka, M. Dendisová, Z. Zlámalová Cílová, J. Oswald
    Ageing of PVP/LiNbO3 solutions and its impact on the optical properties of Er3+/Yb3+:LiNbO3 waveguiding films
    Journal of Physics and Chemistry of Solids 111 (2017) 343-348.
  10. L. Střižík, T. Wágner, V. Weissová, J. Oswald, K. Palka, L. Beneš, M. Krbal, R. Jambor, C. Koughia, S. O. Kasap
    Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 lm photoluminescence activated by thermal treatment
    Journal of Materials Chemistry C 5 (2017) 8489-8497.
  11. D. Mikolášová, K. Rubešová, V. Jakeš, P. Nekvindová, L. Nádherný, J. Oswald
    Polyethylene glycol (PEG) used in the preparation of (Er3+/Yb3+):LiNbO3 waveguides
    Materials Science and Engineering 266 (2017) 1-6.
  12. V. Jakeš, V. Polák, K. Rubešová, T. Hlásek, D. Mikolášová, L. Nádherný, P. Nekvindová, J. Oswald
    Modification of Er:YbAG film microstructure with a sintering Agent
    Materials Science and Engineering 266 (2017) 2-8.
  13. L. Střižík, J. Zhang, T. Wágner, J. Oswald, T. Kohoutek, B.M. Walsh, J. Přikryl, R. Svoboda, C. Liu, B. Frumarová, M. Frumar, M. Pavlista, W.J. Park, J. Heo
    Green, red and near-infrared photon up-conversion in Ga-Ge-Sb-S:Er3+ amorphous chalcogenides
    Journal of Luminescence 147 (2014) 209-215.
  14. T. Klásek, K. Rubešová, V. Jakeš, O. Jankovský, J. Oswald
    Infrared luminescence in Er3+:Yb3Al5O12 bulk ceramics prepared by sol–gel method.
    Journal of the European Ceramic Society 34 (2014) 3779-3782.
  15. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  16. K. Rubešová, T. Hlásek, V. Jakeš, P. Matějka, J. Oswald, P. Holzhauser
    Ytterbium and erbium derivatives of 2-methoxyethanol and their use in the thin film deposition of Er-doped Yb3Al5O12
    Journal of Sol-Gel Science and Technology 70 (2014) 142-148.
  17. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  18. A. Macková, P. Malinský, H. Pupíková, P. Nekvindová, J. Cajzl, Z. Sofer, R.A. Wilhelm, A. Kolitsch, J. Oswald
    The structural changes and optical properties of LiNbO3 after Er implantation using high ion fluencies.
    Nuclear Instruments and Methods in Physics Research Section B 332 (2014) 74-79.
  19. A. Macková, P. Malinský, H. Pupiková, P. Nekvindová, J. Cajzl, B. Švecová, J. Oswald, R.A. Wilhelm, A. Kolitsch
    A comparison of the structural changes and optical properties of LiNbO3,Al2O3 and ZnO after Er+ ion implantation
    Nuclear Instruments and Methods in Physics Research Section B 331 (2014) 182-186.
  20. A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken
    InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
    Nanotechnology 25 (2014) 455501-1-455501-6.
  21. J. Remsa, M. Jelínek, T. Kocourek, J. Oswald, V. Studnička, M. Čerňanský, F. Uherek, Michal Jelínek
    Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing
    Applied Surface Science 255 (2009) 5292-5294.
  22. B. Frumarová, M. Frumar, J. Oswald, M. Kincl, M. Vlček
    Structure and optical properties of chalcohalide glasses doped with Pr3+ and Yb3+ ions
    Journal of Non-Crystalline Solids 355 (2009) 1865-1868.
  23. K. Neudert, F. Trojánek, K. Kuldová, J. Oswald, A. Hospodková, P. Malý
    Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    physica status solidi (c) 6 (2009) 853-856.
  24. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
    Superlattices and Microstructures 46 (2009) 324-327.
  25. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, J. Vyskočil, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures emitting in the 1.55 μm band.
    IOP Conference Series: Materials Science and Engineering 6 (2009) 012007-1-012007-4.
  26. S. Stara-Janakova, J. Spirkova, B. Svecova, M. Mika, J. Oswald, A. Mackova
    Chromium(IV) ions containing novel silicate glasses
    Optical Materials 32 (2009) 85-88.
  27. B. Svecova, J. Spirkova, S. Janakova, M. Mika, J. Oswald, A. Mackova
    Diffusion process applied in fabrication of ion-exchanged optical waveguides in novel Er3+ and Er3+/Yb3+-doped silicate glasses
    Journal of Materials Science: Materials in Electronics 20 (2009) S510-S513.
  28. Stanislava Stara-Janakova, Jarmila Spirkov, Martin Mika, J. Oswald
    Dysprosium (III)-doped novel silicate glasses
    Optical Materials 32 (2009) 79-84.
  29. B. Svecova, P. Nekvindova, A. Mackova, J. Oswald, J. Vacik, R. Grötzschel, J. Spirkova
    Er+ medium energy ion implantation into lithium niobate
    Nuclear Instruments and Methods in Physics Research Section B 267 (2009) 1332-1335.
  30. V. Prajzler, I. Huttel, O. Lyutakov, J. Oswald, V. Machovic, V. Jerabek
    Optical Properties of PMMA Doped With Erbium(III) and Ytterbium(III) Complexes
    Polymer Egineering and Science 49 (2009) 1814-1817.