Publications

  1. V. Jarý, A. Hospodková, T. Hubáček, F. Hájek, K. Blažek, M. Nikl
    Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates
    IEEE Transactions on Nuclear Science 67 (2020) 974-977.
  2. T. Hubáček, A. Hospodková, K. Kuldová, M. Slavická Zíková, J. Pangrác, J. Čížek, M.O. Liedke, M. Butterilng, A. Wagner, P. Hubík, E. Hulicius
    Improvement of luminescence properties of n-GaN using TEGa precursor
    Journal of Crystal Growth 531 (2020) 125383(1)-125383(7).
  3. A. Hospodková, F. Hájek, J. Pangrác, M. Slavická Zíková, T. Hubáček, K. Kuldová, J. Oswald, T. Vaněk, A. Vetuško, J. Čížek, M.O. Liedke, M. Butterling, A. Wagner
    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
    Journal of Crystal Growth 536 (2020) 125579(1)-125579(6).
  4. M. Slavická Zíková, A. Hospodková, J. Pangrác, T. Hubáček, J. Oswald, K. Kuldová, F. Hájek, G. Ledoux, C. Dujardin
    Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
    Journal of Crystal Growth 506 (2019) 8-13.
  5. F. Dominec, A. Hospodková, T. Hubáček, M. Slavická Zíková, J. Pangrác, K. Kuldová, A. Vetuško, E. Hulicius
    Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
    Journal of Crystal Growth 507 (2019) 246-250.
  6. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác, M. Slavická Zíková, F. Hájek, F. Dominec, N. Florini, Ph. Komninou, G. Ledoux, C. Dujardin
    Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
    Journal of Crystal Growth 507 (2019) 310-315.
  7. G. Toci, L. A. Gizzi, P. Koester, F. Baffigi, L. Fulgentini, L. Labate, A. Hospodková, V. Jarý, M. Nikl, M. Vannini
    InGaN/GaN multiple quantum well for superfast scintillation application: photoluminescence measurements of the picosecond rise time and excitation density effect
    Journal of Luminescence 208 (2019) 119-124.
  8. E. Hulicius, A. Hospodková, M. Slavická Zíková
    Quantum Dots
    Chapter 6: Quantum dots (pp.175-216), in: Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties, Ed.: Stuart Irvine, Peter Capper, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN: 978-1-119-31301-4, October 2019, 584 Pages.
  9. T. Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, V. Jarý, F. Dominec, M. Slavická Zíková, F. Hájek, E. Hulicius, A. Vetuško, G. Ledoux, Ch. Dujardin, M. Nikl
    Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
    CrystEngComm 21 (2019) 356-362.
  10. A. Hospodková, M. Slavická Zíková, T. Hubáček, J. Pangrác, K. Kuldová, F. Hájek, F. Dominec, A. Vetuško, S. Hasenöhrl
    Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
    Lithuanian Journal of Physics 59 (2019) 179-186.
  11. A. Hospodková, T. Hubáček, J. Oswald, J. Pangrác, K. Kuldová, M. Hývl, F. Dominec, G. Ledoux, Ch. Dujardin
    InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
    physica status solidi (b) 255 (2018) 1700464(1)-1700464(5).
  12. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  13. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  14. M.P. Mikhailova, V.A. Berezovets, R.V. Parfeniev, L.V. Danilov, M.O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius
    Vertical Transport in Type-II Heterojunctions with InAs/GaSb/AlSb Composite Quantum Wells in a High Magnetic Field
    Semiconductors 51 (2017) 1343-1349.
  15. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  16. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  17. A. Hospodková, E. Hulicius, J. Pangrác, F. Dominec, M.P. Mikhailova, A.I. Veinger, I.V. Kochman
    InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
    Journal of Crystal Growth 464 (2017) 206-210.
  18. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  19. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  20. A. Hospodková, J. Oswald, J. Pangrác, K. Kuldová, M. Slavická Zíková, J. Vyskočil, E. Hulicius
    Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
    Physica B: Condensed Matter 480 (2016) 14-22.
  21. K. Kočí, L. Matějová, N. Ambrožová, M. Šihor, I. Troppová, L. Čapek, A. Kotarba, P. Kustrowski, A. Hospodková, L. Obalová
    Optimization of cerium doping of TiO2 for photocatalytic reduction of CO2 and photocatalytic decomposition of N2O
    Journal of Sol-Gel Science and Technology 78 (2016) 550-558.
  22. M.P. Mikhailova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, M.O. Safonchik, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells
    Journal of Nanophotonics 10 (2016) 046013(1)-046013(8).
  23. I.V. Kochman, A.I. Veinger, M.P. Mikhailova, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovetz, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption by 2D-electrons in the type II composite InAs/GaSb/AlSb quantum wells in a magnetic field
    Journal of Physics: Conference Series 769 (2016) 012075(1)-012075(6).
  24. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Vyskočil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou
    The Metalorganic Vapour Phase Epitaxy Growth of AIIIBV Heterostructures Observed by Reflection Anisotropy Spectroscopy
    Acta Physica Polonica A 129 (2016) A-75-A-78.
  25. M.P. Mikhaliova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells
    Proceedings of SPIE 9755 (2016) 97552R(1)-97552R(1).
  26. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, P. Krčil, E. Hulicius, Ph. Komninou, J. Kioseoglou
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Journal of Crystal Growth 414 (2015) 167-171.
  27. J. Vyskočil, P. Gladkov, O. Petříček, A. Hospodková, J. Pangrác
    Growth and properties of AIIIBV QD structures for intermediate band solar cells
    Journal of Crystal Growth 414 (2015) 172-176.
  28. A. Hospodková, J. Pangrác, J. Vyskočil, M. Slavická Zíková, J. Oswald, Ph. Komninou, E. Hulicius
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
    Journal of Crystal Growth 414 (2015) 156-160.
  29. M. Reli, M. Edelmannová, M. Šihor, P. Praus, L. Svoboda, K. Kutláková Mamulová, H. Otoupalíková, L. Čapek, A. Hospodková, L. Obalová, K. Kočí
    Photocatalytic H2 generation from aqueous ammonia solution using ZnO photocatalysts prepared by different methods
    International Journal of Hydrogen Energy 40 (2015) 8530-8538.
  30. M. Mikhailova, E. Ivanov, L. Danilov, A. Petukhov, K. Kalinina, N. Stoyanov, Y. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well
    Proceedings of SPIE 9450 (2015) 94500J-94500J.
  31. A. Hospodková, L. Svoboda, P. Praus
    Dependence of photocatalytic activity of ZnxCd1-xS quantum dot composition
    Chinese Journal of Catalysis 36 (2015) 328-335.
  32. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  33. A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken
    InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
    Nanotechnology 25 (2014) 455501-1-455501-6.
  34. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  35. M. Pokorný, M. Kozák, F. Trojánek, J. Pangrác, A. Hospodková
    Type-I InAs quantum dots covered by GaAsSb strain reducing layer
    Proceedings of SPIE 9161 (2014) 916113(1)-916113(4).
  36. P. Praus, L. Svoboda, J. Tokarský, A. Hospodková, V. Klemm
    Core/shell CdS/ZnS nanoparticles: Molecular modelling andcharacterization by photocatalytic decomposition of Methylene Blue
    Applied Surface Science 292 (2014) 813-822.
  37. L. Matějová, K. Kočí, M. Reli, L. Čapek, A. Hospodková, P. Peikertová, Z. Matěj, L. Obalová, A. Wach, P. Kustrowski, A. Kotarba
    Preparation, characterization and photocatalytic properties of ceriumdoped TiO2: On the effect of Ce loading on the photocatalyticreduction of carbon dioxide
    Applied Catalysis B: Environmental 152-153 (2014) 172-183.
  38. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).
  39. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, K. Kuldová, J. Vyskočil, E. Hulicius
    Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 370 (2013) 303-306.
  40. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  41. M. P. Mikhailova, L. V. Danilov, K. V. Kalinina, E. V. Ivanov, N. D. Stoyanov, G. G. Zegrya, Y. P. Yaklovev, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
    Chapter in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 105-131 (2013), ISBN: 0819495964.
  42. M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác
    Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy
    Semiconductors 47 (2013) 1041-1045.
  43. P. Hazdra, J. Oswald, A. Hospodková, E. Hulicius, J. Pangrác
    Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
    Thin Solid Films 543 (2013) 83-87.
  44. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, N. D. Stoyanov, G. G. Zegrya, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, M. Slavická Zíková
    Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
    Journal of Applied Physics 112 (2012) 023108(1)-023108(5).
  45. A. Hospodková
    Capping of InAs/GaAs quantum dots for GaAs based lasers
    Quantum Dots / Book 2, Ed. Ameenah Al-Ahmadi, Intech open, 2012.
  46. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  47. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  48. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  49. K. Kočí, L. K. Zatloukalová, Obalová, S. Krejčíková, Z. Lacný, L. Čapek, A. Hospodková, O. Šolcová
    Wavelength Effect on Photocatalytic Reduction of CO2 by Ag/TiO2 Catalyst
    Chinese Journal of Catalysis 32 (2011) 812-815.
  50. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.