1. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  2. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  3. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.
  4. J. Pangrác, M. Fulem, E. Hulicius, K. Melichar, T. Šimeček, K. Růžička, P. Morávek, V. Růžička, S.A. Rushworth
    Vapor pressure of germanium precursors
    Journal of Crystal Growth 310 (2008) 4720-4723.
  5. J. Walachová, J. Zelinka, V. Malina, J. Vaniš, F. Šroubek, J. Pangrác, K. Melichar, E. Hulicius
    Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs/AlGaAs heterostructure
    Applied Physics Letters 92 (2008) 012101(1)-012101(3).
  6. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  7. M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, K. Melichar, J. Pangrác, S. A. Rushworth, L. M. Smith
    Vapor pressure of metal organic precursors
    Journal of Crystal Growth 248 (2003) 99-107.
  8. P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček
    InAs $\delta$-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
    Journal of Crystal Growth 248 (2003) 328-332.
  9. J. Toušková, D. Kindl, E. Samochin, J. Toušek, E. Hulicius, J. Pangrác, T. Šimeček, Z. Výborný
    Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE
    Solar Energy Materials and Solar Cells 76 (2003) 135-145.
  10. K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, J. Oswald, E. Hulicius, J. Pangrác, T.Šimeček
    Electroluminescence in a Semimetal Channel at a Single Broken-Gap Heterointerface of Type II
    Semiconductors, 37, 1185 - 1189 (2003).
  11. J. Toušková, D. Kindl, B. Blahitka, J. Toušek, E. Hulicius, J. Pangrác, E. Samochin, T. Šimeček, Z. Výborný
    Current-voltage characteristics of GaSb homojunctions prepared by MOVPE
    Solid-State Electronics 47 (2003) 1471-1478.
  12. J. Vaniš, D.H. Chow, J. Pangrác, F. Šroubek, T.C. McGill, J. Walachová
    Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode
    phys. status solidi c 0 (2003) 986 - 991