1. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  2. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  3. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  4. J. Cajzl, P. Nekvindová, A. Macková, P. Malinský, D. Sedmidubský, M. Hušák, Z. Remeš, M. Varga, A. Kromka, R. Böttger, J. Oswald
    Erbium ion implantation into diamond – measurement and modelling of the crystal structure
    Physical Chemistry Chemical Physics 19 (2017) 6233-6245.
  5. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  6. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  7. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  8. S. Staněk, P. Nekvindová, B. Švecová, S. Vytykačová, M. Míka, J. Oswald, O. Barkman, J. Špirková
    The influence of silver ion exchange on the luminescence properties of Er-Yb silicate glasses.
    Optical Materials 72 (2017) 183-189.
  9. K. Rubešová, D. Mikolášová, T. Hlásek, V. Jakeš, P. Nekvindová, P. Matějka, M. Dendisová, Z. Zlámalová Cílová, J. Oswald
    Ageing of PVP/LiNbO3 solutions and its impact on the optical properties of Er3+/Yb3+:LiNbO3 waveguiding films
    Journal of Physics and Chemistry of Solids 111 (2017) 343-348.
  10. L. Střižík, T. Wágner, V. Weissová, J. Oswald, K. Palka, L. Beneš, M. Krbal, R. Jambor, C. Koughia, S. O. Kasap
    Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 lm photoluminescence activated by thermal treatment
    Journal of Materials Chemistry C 5 (2017) 8489-8497.
  11. D. Mikolášová, K. Rubešová, V. Jakeš, P. Nekvindová, L. Nádherný, J. Oswald
    Polyethylene glycol (PEG) used in the preparation of (Er3+/Yb3+):LiNbO3 waveguides
    Materials Science and Engineering 266 (2017) 1-6.
  12. V. Jakeš, V. Polák, K. Rubešová, T. Hlásek, D. Mikolášová, L. Nádherný, P. Nekvindová, J. Oswald
    Modification of Er:YbAG film microstructure with a sintering Agent
    Materials Science and Engineering 266 (2017) 2-8.
  13. T. Hlásek, K. Rubešová, V. Jakeš, P. Nekvindová, J. Oswald, M. Kučera, M. Hanuš
    Influence of gallium on infrared luminescence in Er3+ doped Yb3Al5-yGayO12 films grown by the liquid phase epitaxy.
    Journal of Luminescence 164 (2015) 90-93.
  14. J. Stoulil, T. Prošek, A. Nazarov, J. Oswald, P. Kříž, D. Thierry
    Electrochemical properties of corrosion products formed on Zn-Mg, Zn-Al and Zn-Al-Mg coatings in model atmospheric conditions.
    Materials and Corrosion 66 (2015) 777-782.
  15. M. Mikhailova, E. Ivanov, L. Danilov, A. Petukhov, K. Kalinina, N. Stoyanov, Y. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well
    Proceedings of SPIE 9450 (2015) 94500J-94500J.
  16. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, P. Krčil, E. Hulicius, Ph. Komninou, J. Kioseoglou
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Journal of Crystal Growth 414 (2015) 167-171.
  17. A. Hospodková, J. Pangrác, J. Vyskočil, M. Slavická Zíková, J. Oswald, Ph. Komninou, E. Hulicius
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
    Journal of Crystal Growth 414 (2015) 156-160.
  18. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  19. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  20. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  21. V. Prajzler, V. Jeřábek, O. Lyutakov, I. Hüttel, J. Špirková, V. Machovič, J. Oswald, D. Chvostová, J. Zavadil
    Optical Properties of Erbium and Erbium/Ytterbium Doped Polymethylmethacrylate
    Acta Polytechnica, Czech Technical University in Prague 48 (2008) 14-20.
  22. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.