1. P. Nekvindová, J. Cajzl, A. Macková, P. Malinský, J. Oswald, R. Böttger, R. Yatskiv
    Er implantation into various cuts of ZnO e experimental study and DFT modelling
    Journal of Alloys and Compounds 816 (2020) 1-14.
  2. P. Nekvindová, J. Cajzl, A. Macková, P. Malinský, J. Oswald, R. Böttger, R. Yatskiv
    Er implantation into various cuts of ZnO – experimental study and DFT modelling.
    Journal of Alloys and Compounds 111 (2020) 10-11.
  3. J. Cajzl, P. Nekvindová, K. Jeníčková, A. Jagerová, P. Malinský, Z. Remeš, N. Neykova, Y.Y. Chang, J. Oswald, U. Kentsch, A. Macková
    Erbium-ion implantation of single- and nano-crystalline ZnO
    Nuclear Instruments and Methods in Physics Research Section B 464 (2020) 65-73.
  4. A. Hospodková, F. Hájek, J. Pangrác, M. Slavická Zíková, T. Hubáček, K. Kuldová, J. Oswald, T. Vaněk, A. Vetuško, J. Čížek, M.O. Liedke, M. Butterling, A. Wagner
    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
    Journal of Crystal Growth 536 (2020) 125579(1)-125579(6).
  5. K. Kuldová, M. Molas, J. Borysiuk, A. Babiński, Z. Výborný, J. Pangrác, J. Oswald
    Quantum confinement in MOVPE-grown structures with selfassembled InAs/GaAs quantum dots
    Journal of Physics: Conference Series 245 (2010) 01207(1)-01207(4).
  6. J. Oswald, P. Hazdra, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác, J. Vyskočil
    Electro- and photoluminescence of InAs/GaAs quantum dot structures
    Journal of Physics: Conference Series 245 (2010) 012080(1)-012080(4).
  7. V. Prajzler, Oleksiy Lyutakov, I. Hüttel, J. Špirková, J. Oswald, V. Machovič, V. Jeřábek
    Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm
    Journal of Applied Polymer Science 117 (2010) 1608-1612.
  8. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.
  9. Jing Ren, T. Wagner, J. Oswald, J. Orava, B. Frumarova, M. Frumara
    Spectroscopic properties of Ni2+ and rare-earth codoped Ge–Ga–Sb–S glass.
    Journal of Physics and Chemistry of Solids 71 (2010) 30-34.
  10. A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, O.Caha
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 312 (2010) 1383-1387.
  11. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  12. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  13. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  14. V. Prajzler, V. Jeřábek, O. Lyutakov, I. Hüttel, J. Špirková, V. Machovič, J. Oswald, D. Chvostová, J. Zavadil
    Optical Properties of Erbium and Erbium/Ytterbium Doped Polymethylmethacrylate
    Acta Polytechnica, Czech Technical University in Prague 48 (2008) 14-20.
  15. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.