1. J. Remsa, M. Jelínek, T. Kocourek, J. Oswald, V. Studnička, M. Čerňanský, F. Uherek, Michal Jelínek
    Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing
    Applied Surface Science 255 (2009) 5292-5294.
  2. B. Frumarová, M. Frumar, J. Oswald, M. Kincl, M. Vlček
    Structure and optical properties of chalcohalide glasses doped with Pr3+ and Yb3+ ions
    Journal of Non-Crystalline Solids 355 (2009) 1865-1868.
  3. K. Neudert, F. Trojánek, K. Kuldová, J. Oswald, A. Hospodková, P. Malý
    Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    physica status solidi (c) 6 (2009) 853-856.
  4. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
    Superlattices and Microstructures 46 (2009) 324-327.
  5. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, J. Vyskočil, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures emitting in the 1.55 μm band.
    IOP Conference Series: Materials Science and Engineering 6 (2009) 012007-1-012007-4.
  6. S. Stara-Janakova, J. Spirkova, B. Svecova, M. Mika, J. Oswald, A. Mackova
    Chromium(IV) ions containing novel silicate glasses
    Optical Materials 32 (2009) 85-88.
  7. B. Svecova, J. Spirkova, S. Janakova, M. Mika, J. Oswald, A. Mackova
    Diffusion process applied in fabrication of ion-exchanged optical waveguides in novel Er3+ and Er3+/Yb3+-doped silicate glasses
    Journal of Materials Science: Materials in Electronics 20 (2009) S510-S513.
  8. Stanislava Stara-Janakova, Jarmila Spirkov, Martin Mika, J. Oswald
    Dysprosium (III)-doped novel silicate glasses
    Optical Materials 32 (2009) 79-84.
  9. B. Svecova, P. Nekvindova, A. Mackova, J. Oswald, J. Vacik, R. Grötzschel, J. Spirkova
    Er+ medium energy ion implantation into lithium niobate
    Nuclear Instruments and Methods in Physics Research Section B 267 (2009) 1332-1335.
  10. V. Prajzler, I. Huttel, O. Lyutakov, J. Oswald, V. Machovic, V. Jerabek
    Optical Properties of PMMA Doped With Erbium(III) and Ytterbium(III) Complexes
    Polymer Egineering and Science 49 (2009) 1814-1817.
  11. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  12. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  13. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  14. V. Prajzler, V. Jeřábek, O. Lyutakov, I. Hüttel, J. Špirková, V. Machovič, J. Oswald, D. Chvostová, J. Zavadil
    Optical Properties of Erbium and Erbium/Ytterbium Doped Polymethylmethacrylate
    Acta Polytechnica, Czech Technical University in Prague 48 (2008) 14-20.
  15. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.
  16. P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček
    InAs $\delta$-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
    Journal of Crystal Growth 248 (2003) 328-332.
  17. K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, J. Oswald, E. Hulicius, J. Pangrác, T.Šimeček
    Electroluminescence in a Semimetal Channel at a Single Broken-Gap Heterointerface of Type II
    Semiconductors, 37, 1185 - 1189 (2003).
  18. P. Hubík, L. Dózsa, P. Lipavský, J. Oswald, J. J. Mareš, J. Krištofik
    Dynamical behaviour of the delta-doped Au/GaAs Schottky barrier
    phys stat sol (a) 195 (2003 accepted, January 2003) 61 - 66 195 (2003) 61-66.
  19. P. Nekvindová, A. Macková, V. Peřina, J. Červená, P. Čapek, J. Schröfel, J. Špirková, J. Oswald
    Erbium medium temperature localised doping into lithium niobate and sapphire:A comparative study
    Solid State Phenomena 90-91 (2003) 559-564.