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  3. Ing. Tomáš Hubáček, Ph.D.
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Ing. Tomáš Hubáček, Ph.D.

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Tomáš Hubáček
Pracovní pozice
Head of Laboratory
Category
Scientist
Division (no.)
Division of Solid State Physics (3)
Department (no.)
Department of Semiconductors (14)
Laboratory / Scientific group
MOVPE laboratory (1404)
Telephone
+420 220 318 584, +420 220 318 595
E-mail
hubacekt [at] fzu.cz
Locality
Cukrovarnická
Room
F 104
F 107
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  • Poloprovoz, ověřená technologie
  1. T.Vaněk, A. Hospodková, F. Hájek, K. Blažek, T. Hubáček, F. Dominec
    Luminescent epitaxial structure and way of preparation
  2. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, V. Jarý
    Technology of preparation of thick InGaN/GaN layers
  3. T. Hubáček, A. Hospodková
    FW03010298-V24: GaN buffer layers on YAP, GaGG
  4. T. Hubáček, A. Hospodková
    FW03010298-V25: Nitride heterostructure for ionized radiation imaging
  5. T. Hubáček, A. Hospodková
    Functional sample - fast decay scintillator based on InGaN/GaN multiple quantum wells
  6. T. Hubáček, A. Hospodková
    Preparation of functional InGaN/GaN heterostructure on sapphire substrate
  7. A. Hospodková, T. Hubáček
    Preparation method of epitaxial structure with InGaN quantum wells

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