Ing. Tomáš Hubáček, Ph.D.

Tomáš Hubáček

Head of Laboratory

Category

Scientist

Division (no.)

Division of Solid State Physics (3)

Department (no.)

Department of Semiconductors (14)

Laboratory / Scientific group

MOVPE laboratory (1404)

Telephone

+420 220 318 584, +420 220 318 595

E-mail

hubacekt [at] fzu.cz

Locality

Cukrovarnická

Room

F 104

F 107

Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface

Mechanism of V-pit influence

Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

Dep14_YB PL vs doping.png

Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers

Dep14_Vacancy in GaN.png

V-pits formation in InGaN/GaN: influence of threading dislocations and indium content

Dep14 V-pit in GaN.png

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Schema struktury HEMT

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

pssB 255 2018 1700464

© 1998 – 2026 Copyright © Fyzikální ústav AV ČR, v. v. i.