1. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  2. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  3. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  4. V. Prajzler, V. Jeřábek, O. Lyutakov, I. Hüttel, J. Špirková, V. Machovič, J. Oswald, D. Chvostová, J. Zavadil
    Optical Properties of Erbium and Erbium/Ytterbium Doped Polymethylmethacrylate
    Acta Polytechnica, Czech Technical University in Prague 48 (2008) 14-20.
  5. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.
  6. P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček
    InAs $\delta$-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
    Journal of Crystal Growth 248 (2003) 328-332.
  7. K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, J. Oswald, E. Hulicius, J. Pangrác, T.Šimeček
    Electroluminescence in a Semimetal Channel at a Single Broken-Gap Heterointerface of Type II
    Semiconductors, 37, 1185 - 1189 (2003).
  8. P. Hubík, L. Dózsa, P. Lipavský, J. Oswald, J. J. Mareš, J. Krištofik
    Dynamical behaviour of the delta-doped Au/GaAs Schottky barrier
    phys stat sol (a) 195 (2003 accepted, January 2003) 61 - 66 195 (2003) 61-66.
  9. P. Nekvindová, A. Macková, V. Peřina, J. Červená, P. Čapek, J. Schröfel, J. Špirková, J. Oswald
    Erbium medium temperature localised doping into lithium niobate and sapphire:A comparative study
    Solid State Phenomena 90-91 (2003) 559-564.