1. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  2. A. Hospodková, E. Hulicius, J. Pangrác, F. Dominec, M.P. Mikhailova, A.I. Veinger, I.V. Kochman
    InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
    Journal of Crystal Growth 464 (2017) 206-210.
  3. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  4. T. Hubáček, A. Hospodková, J. Oswald, K. Kuldová, J. Pangrác
    Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
    Journal of Crystal Growth 464 (2017) 221-225.
  5. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  6. A. Hospodková, J. Oswald, M. Slavická Zíková, J. Pangrác, K. Kuldová, K. Blažek, G. Ledoux, C. Dujardin, M. Nikl
    On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
    Journal of Applied Physics 121 (2017) 214505(1)-214505(8).
  7. M.P. Mikhailova, V.A. Berezovets, R.V. Parfeniev, L.V. Danilov, M.O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius
    Vertical Transport in Type-II Heterojunctions with InAs/GaSb/AlSb Composite Quantum Wells in a High Magnetic Field
    Semiconductors 51 (2017) 1343-1349.
  8. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  9. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, K. Kuldová, J. Vyskočil, E. Hulicius
    Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 370 (2013) 303-306.
  10. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).
  11. P. Hazdra, J. Oswald, A. Hospodková, E. Hulicius, J. Pangrác
    Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
    Thin Solid Films 543 (2013) 83-87.
  12. M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác
    Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy
    Semiconductors 47 (2013) 1041-1045.
  13. M. P. Mikhailova, L. V. Danilov, K. V. Kalinina, E. V. Ivanov, N. D. Stoyanov, G. G. Zegrya, Y. P. Yaklovev, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
    Chapter in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 105-131 (2013), ISBN: 0819495964.
  14. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).