1. A. Hospodková, J. Vyskočil, M. Slavická Zíková, J. Oswald, J. Pangrác, O. Petříček
    GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
    Materials Research Express 4 (2017) 025502(1)-025502(8).
  2. J. Vyskočil, A. Hospodková, O. Petříček, J. Pangrác, M. Slavická Zíková, J. Oswald, A. Vetuško
    GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
    Journal of Crystal Growth 464 (2017) 64-68.
  3. J. Vyskočil, P. Gladkov, O. Petříček, A. Hospodková, J. Pangrác
    Growth and properties of AIIIBV QD structures for intermediate band solar cells
    Journal of Crystal Growth 414 (2015) 172-176.
  4. S. Civiš, V. Horká, T. Šimeček, E. Hulicius, J. Pangrác, J. Oswald, O. Petříček, Y. Rouillard, C. Alibert, R. Werner
    GaSb based lasers operating near 2.3 µm for high resolution absorption spectroscopy
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 61 (2005) 3066-3069.
  5. J. Oswald, J. Pastrňák, O. Petříček, F. Karel, M. Cukr
    Luminescence of n-type GaAs Breakdown regime
    Acta Technica CSAV 42 (1997) 693-698.