The aim of project is industrial research and experimental development of heteroepitaxial growth of nitride heterostructures for following semiconductor applications: 1) MOCVD technology for the growth of functional nitride heterostructures on substrates with diameter 200 mm 2) development of characterization of functional structures for semiconductor applications (certified functional HEMT heterostructures) 3) Development of suitable characterization methods of nitride heterostructures prepared for semiconductor applications. Support of developing cooperation between research institutions and industrial partner will ensure obtaining new applications (certified technologies, functional samples and developed characterization methods) in semiconductor industry in Czech Republic.
New semiconductor heterostructures for advanced electronic applications
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