Materiály a systémy v nanoměřítku

  1. V. Švrček, A. Slaoui, J. -C. Muller, J. -L. Rehspringer, B. Hönerlage, R. Tomasiunas, I. Pelant
    Studies of silicon nanocrystals in phosphorus rich SiO2 matrices.
    Physica E 16 (2003) 420 - 423
  2. B. Rezek, T. Mates, J. Stuchlík, J. Kočka, A. Stemmer
    Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
    Appl. Phys. Lett. 83 (2003) 1764 - 1766
  3. A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama
    Sructure and properties of silicon thin films deposited at low substrate temperatures
    Japanese Journal of Applied Physics 242 (2003) L987- L989.
  4. J. Kočka, A. Fejfar, T. h. Stuchlíková, J. Stuchlík, P. Fojtík, T. Mates, B. Rezek, K. Luterová, V. Švrček, I. Pelant
    Basic features of transport in microcrystalline silicon
    Solar Energy Materials and Solar Cells 78 (2003) 493-512.
  5. M. Ito, S. Yoneyama, Y. Ito, H. Uyama, T. Mates, M. Ledinský, K. Luterová, P. Fojtík, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Silicon thin films deposited at very low substrate temperature
    Thin Solid Films 442 (2003) 163-166.
  6. V. Švrček, I. Pelant, P. Fojtík, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
    J. Appl. Phys. 92 (2002) 2323 - 2329
  7. I. Pelant, P. Fojtík, K. Luterová, J. Kočka, A. Poruba, J. Štěpánek
    Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
    Appl. Phys. A-Mater. 74 (2002) 557 - 560
  8. B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka
    Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.
    J. Appl. Phys. 92 (2002) 587 - 593
  9. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  10. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  11. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  12. V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
    Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 395 - 399
  13. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of chrge carrier transport in mc-Si:H/a-Si:H superlattices
    Mater. Sci. Forum 384-385 (2002) 301 - 304
  14. G. Juška, K. Arlauskas, N. Nekrašas, J. Stuchlík, X. Niquille, N. Wyrch
    Features of Charge carrier transport determined from carrier extraction current in uc-Si:H.
    J. Non-Cryst. Solids 299-302 (2002) 375 - 379
  15. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.
  16. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  17. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  18. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  19. V. Švrček, I. Pelant, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philos. Mag. Lett. 81 (2001) 405 - 410
  20. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  21. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  22. V. Cech, J. Stuchlík
    Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.
    phys. status solidi a 187 (2001) 487 - 491
  23. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
    in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
  24. G. Juška, N. Nekrašas, I. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si: Superlattices.
    Mater. Sci. Forum 384-385 (2001) 301 - 304
  25. I. Pelant, P. Fojtik, K. Luterova, J. Kočka, K. Knížek, J. Stepanek
    Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
    Thin Solid Films 383 (2001) 101-103.
  26. K. Luterová, A. Poruba, J. Dian, O. Salyk, P. Horváth, P. Knápek, J. Valenta, J. Kočka, I. Pelant
    Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission.
    J. Porous Mat. 7 (2000) 135 - 138
  27. G. Juška, K. Arlauskas, M. Viliunas, J. Kočka
    Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon.
    Phys. Rev. Lett. 84 (2000) 4946
  28. K. Luterová, I. Pelant, P. Fojtík, M. Nikl, I. Gregora, J. Kočka, J. Dian, J. Valenta, P. Malý, J. Kudrna, J. Štěpánek, A. Poruba, P. Horváth
    Visible photoluminescence and electroluminescence in wide-band gap hydrogenated amorphous silicon.
    Philos. Mag. B 80 (2000) 1811 - 1832
  29. A. Poruba, A. Fejfar, O. Salyk, M. Vaněček, J. Kočka
    Surface and bulk light scattering in microcrystalline silicon for solar cells.
    J. Non-Cryst. Solids 271 (2000) 152 - 156
  30. A. Fejfar, B. Rezek, P. Knápek, J. Stuchlík, J. Kočka
    Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.
    J. Non-Cryst. Solids 266-269 (2000) 309 - 314
  31. G. Juška, K. Genevičius, M. Viliunas, K. Arlauskas, T. h. Stuchlíková, A. Fejfar, J. Kočka
    New method of drift mobility evaluation in uc-Si:H, basic idea and comparison with time-of-flight.
    J. Non-Cryst. Solids 266-269 (2000) 331 - 335
  32. K. Luterová, P. Fojtík, A. Poruba, J. Dian, J. Valenta, T. h. Stuchlíková, J. Štěpánek, J. Kočka, I. Pelant
    Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition.
    J. Non-Cryst. Solids 266-269 (2000) 583 - 587
  33. K. Nakahata, T. Kamiya, C. M. Fortmann, I. Schimizu, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
    J. Non-Cryst. Solids 266-269 (2000) 341 - 346
  34. A. Poruba, A. Fejfar, Z. Remeš, J. Springer, M. Vaněček, J. Kočka
    Optical absorption and light scattering in microcrystalline silicon thin films and solar cells.
    J. Appl. Phys. 88 (2000) 148 - 160
  35. M. Vanecek, J. Kočka, A. Poruba, A. Fejfar
    Direct measurement of the deep defect density in thin amorphous silicon films with the
    Journal of Applied Physics 78 (1995) 6203-6213.
  36. J. Kočka, M. Vanecek, Z. Kožíšek, O. Stika, J. Beichler
    Comparison of the density of gap states in a-Si:H  found by different methods
    Journal of Non-Crystalline Solids 50&60 (1983) 293-296.
  37. M. Vanecek, J. Kočka, J. Stuchlík, Z. Kožíšek, O. Stika, A. Triska
    Density of the gap states in undoped and doped glow discharge a-Si:H.
    Solar Energy Materials 8 (1983) 411-423.