1. B. Rezek, J. A. Garrido, M. Stutzmann, C. E. Nebel, E. Snidero, P. Bergonzo
    Local Oxidation of Hydrogenated Diamond Surfaces for Device Fabrication.
    phys. status solidi a 139 (2002) 139 (2002) - 528
  2. B. Rezek, C. E. Nebel, M. Stutzmann
    Laser beam induced currents in polycristalline silicon thin films prepared by interference laser crystallization.
    J. Appl. Phys. 91 (2002) 4220 - 4227
  3. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.
  4. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  5. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  6. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  7. V. Švrček, I. Pelant, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philos. Mag. Lett. 81 (2001) 405 - 410
  8. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  9. J. Valenta, J. Dian, K. Luterová, I. Pelant, J. Buršík, D. Nižňanský
    Electroluminescence from Sol-Gel Derived Film of CdS Nanocrystals.
    phys. status solidi a 184 (2001) R1 - R3
  10. J. Kudrna, F. Trojánek, P. Malý, I. Pelant
    Carrier diffusion in microcrystalline silicon studied by picosecond laser induced grating technique.
    Appl. Phys. Lett. 79 (2001) 626 - 628
  11. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  12. V. Cech, J. Stuchlík
    Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.
    phys. status solidi a 187 (2001) 487 - 491
  13. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
    in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
  14. J. Mikulskas, R. Šulcas, E. Vanagas, R. Tomašiunas, K. Luterová, I. Pelant, J. -L. Rehspringer, R. Lévy
    Si+ and Ge+ ion implanted SiO2 matrices: Photoluminiscence pecularities.
    Lithuanian J. Phys. 41 (2001) 399 - 403
  15. G. Juška, N. Nekrašas, I. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of Charge Carrier Transport in uc-Si:H/a-Si: Superlattices.
    Mater. Sci. Forum 384-385 (2001) 301 - 304
  16. I. Pelant, P. Fojtik, K. Luterova, J. Kočka, K. Knížek, J. Stepanek
    Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
    Thin Solid Films 383 (2001) 101-103.
  17. J. Dian, T. Holec, I. Jelínek, J. Jindřich, J. Valenta, I. Pelant
    Time Evolution of Photolumenscence Response from Porous Silicon in Hydrocarbon Gas Sensing.
    phys. status solidi a 182 (2000) 485 - 488
  18. J. Dian, J. Valenta, K. Luterová, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
    Optical properties of Si+ ion implanted sol-gel derived SiO2 films.
    Mat. Sci. Eng. B 69-70 (2000) 564 - 569
  19. J. Kudrna, P. Malý, F. Trojánek, J. Štěpánek, T. Lechner, I. Pelant, J. Meier, U. Kroll
    Ultrafast Carrier Dynamics in Undoped Microcrystalline Silicon.
    Mat. Sci. Eng. B 69-70 (2000) 238 - 242
  20. K. Luterová, A. Poruba, J. Dian, O. Salyk, P. Horváth, P. Knápek, J. Valenta, J. Kočka, I. Pelant
    Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission.
    J. Porous Mat. 7 (2000) 135 - 138
  21. J. Valenta, J. Dian, K. Luterová, P. Knápek, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
    Temperature behaviour of optical properties of Si+-implanted SiO2.
    Eur. Phys. J. D 8 (2000) 395 - 398
  22. G. Juška, K. Arlauskas, M. Viliunas, J. Kočka
    Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon.
    Phys. Rev. Lett. 84 (2000) 4946
  23. K. Luterová, I. Pelant, P. Fojtík, M. Nikl, I. Gregora, J. Kočka, J. Dian, J. Valenta, P. Malý, J. Kudrna, J. Štěpánek, A. Poruba, P. Horváth
    Visible photoluminescence and electroluminescence in wide-band gap hydrogenated amorphous silicon.
    Philos. Mag. B 80 (2000) 1811 - 1832
  24. I. Mikulskas, R. Šulcas, R. Tomašiunas, I. Pelant, J. L. Rehspringer, B. Hönerlage
    Investigation of Si Nanocrystals embedded into porous SiO2 matrix.
    Lithuanian J. Phys. 40 (2000) 160 - 163
  25. K. Luterová, I. Pelant, J. Valenta, J. L. Rehspringer, D. Muller, J. J. Grob, J. Dian, B. Hönerlage
    Red electroluminescence in Si+ implanted sol-gel-derived SiO2 films.
    Appl. Phys. Lett. 77 (2000) 2952 - 2954
  26. A. Poruba, A. Fejfar, O. Salyk, M. Vaněček, J. Kočka
    Surface and bulk light scattering in microcrystalline silicon for solar cells.
    J. Non-Cryst. Solids 271 (2000) 152 - 156
  27. A. Fejfar, B. Rezek, P. Knápek, J. Stuchlík, J. Kočka
    Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.
    J. Non-Cryst. Solids 266-269 (2000) 309 - 314
  28. G. Juška, K. Genevičius, M. Viliunas, K. Arlauskas, T. h. Stuchlíková, A. Fejfar, J. Kočka
    New method of drift mobility evaluation in uc-Si:H, basic idea and comparison with time-of-flight.
    J. Non-Cryst. Solids 266-269 (2000) 331 - 335
  29. K. Luterová, P. Fojtík, A. Poruba, J. Dian, J. Valenta, T. h. Stuchlíková, J. Štěpánek, J. Kočka, I. Pelant
    Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition.
    J. Non-Cryst. Solids 266-269 (2000) 583 - 587
  30. K. Nakahata, T. Kamiya, C. M. Fortmann, I. Schimizu, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
    J. Non-Cryst. Solids 266-269 (2000) 341 - 346
  31. A. Poruba, A. Fejfar, Z. Remeš, J. Springer, M. Vaněček, J. Kočka
    Optical absorption and light scattering in microcrystalline silicon thin films and solar cells.
    J. Appl. Phys. 88 (2000) 148 - 160
  32. B. Rezek, C. E. Nebel, M. Stutzmann
    Local photoconductivity correlation with granular structure of microcrystalline silicon thin films.
    J. Non-Cryst. Solids 266-269 (2000) 315 - 318
  33. B. Rezek, C. E. Nebel, M. Stutzmann
    Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities.
    J. Non-Cryst. Solids 266-269 (2000) 650 - 653
  34. J. Zemek, A. Luches, G. Leggieri, A. Fejfar, M. Trchová
    Characterization of carbon nitride films prepared by laser reactive ablation deposition
    J. Electr. Spectr. Relat. Phenom. 76 (1995) 747 - 752
  35. M. Vanecek, J. Kočka, A. Poruba, A. Fejfar
    Direct measurement of the deep defect density in thin amorphous silicon films with the
    Journal of Applied Physics 78 (1995) 6203-6213.
  36. J. Kočka, M. Vanecek, Z. Kožíšek, O. Stika, J. Beichler
    Comparison of the density of gap states in a-Si:H  found by different methods
    Journal of Non-Crystalline Solids 50&60 (1983) 293-296.
  37. M. Vanecek, J. Kočka, J. Stuchlík, Z. Kožíšek, O. Stika, A. Triska
    Density of the gap states in undoped and doped glow discharge a-Si:H.
    Solar Energy Materials 8 (1983) 411-423.