1. C.E.Nebel, H.Kato, B. Rezek, D.Shin, D.Takeuchi, H.Watanabe, T.Yamamoto
    Electrochemical properties of undoped hydrogen terminated CVD diamond
    Diamond and Related Materials 15 (2006) 264-268.
  2. S.-G. Ri, C.E. Nebel, D. Takeuchi, B. Rezek, N. Tokuda, S. Yamasaki, H.Okushi
    Surface conductive layers on (111) diamonds after oxygen treatments.
    Diamond and Related Materials 15 (2006) 692-697.
  3. B. Rezek, H.Watanabe, C.E.Nebel
    High carrier mobility on hydrogen terminated diamond surfaces.
    Applied Physics Letters 88 (2006) 042110-1-042110-3.
  4. C.E.Nebel, B. Rezek, D.Shin, H.Watanabe, T.Yamamoto
    Electronic properties of H-terminated diamond in electrolyte solutions.
    Journal of Applied Physics 99 (2006) 033711-1-033711-4.
  5. D.Shin, N.Tokuda, B. Rezek, C.E.Nebel
    Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA sensing.
    Electrochemistry Comunications 8 (2006) 844-850.
  6. B. Rezek, D.Shin, T.Nakamura, C.E. Nebel
    Geometric Properties of Covalently Bonded DNA on Single-Crystalline Diamond.
    Journal of the American Chemical Society 128 (2006) 3884-3885.
  7. A. Fejfar, J. Stuchlík, T. Mates, M. Ledinský, S. Honda, J. Kočka
    Patterning of hydrogenated microcrystalline silicon growth by magnetic field
    Applied Physics Letters 87 (2005) 011901(1)- 01190(3).
  8. B. Rezek, J. Stuchlík, J. Kočka, A. Stemmer.
    Persistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids
    Journal of Non-Crystalline Solids 351 (2005) 3127-3131.
  9. K. Luterová, M. Cazanelli, J. -P. Likforman, D. Navarro, J. Valenta, T. Ostatnický, K. Dohnalová, S. Cheylan, P. Gilliot, B. Honerlage, L. Pavesi, I. Pelant
    Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals
    Optical Materials 27 (2005) 750- 755.
  10. T. Ostatnický, J. Valenta, I. Pelant, K. Luterová, R. G. Elliman, S. Cheylan, B. Honerlage
    Photoluminescence from ana active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structures
    Optical Materials 27 (2005) 781- 786.
  11. N. Někrašas, G. Sliaužys, G. Juška, K. Arlauskas, J. Stuchlík, J. Kočka
    Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon
    Acta Physica Polonica A 107 (2005) 373-376.
  12. E. Gatskevich, G. Ivlev, P. Přikryl, R. Černý, V. Cháb, O. Cibulka
    Pulsed laser-induced phase transformation in CdTe single crystals
    Applied Surface Science 248 (2005) 259-263.
  13. S. Honda, T. Mates, M. Ledinský, J. Oswald, A. Fejfar, J. Kočka, T. Yamazaki, Y. Uraoka, T. Fuyuk
    Effect of hydrogen passivation on polycrystalline silicon thin films
    Thin Solid Films 487 (2005) 152- 156.
  14. K. Luterová, D. Navarro, M. Cazzanelli, T. Ostatnický, J. Valenta, S. Cheylan, I. Pelant, L. Pavesi
    Stimulated emission in the active planar optical waveguide made of silicon nanocrystals
    physica status solidi (c) 2 (2005) 3429-3434.
  15. B. Rezek, C.E. Nebel
    Kelvin force microscopy on diamond surfaces and devices
    Diamond and Related Materials 14 (2005) 466-469.
  16. B. Rezek
    Atomic and Kelvin Force Microscopy Applied on Hydrogenated Diamond Surfaces
    New Diamond and Frontier Carbon Technology 15 (2005) 275-295.
  17. K. Luterová, V. Švrček, T. Mates, M. Ledinský, M. Ito, A. Fejfar, J. Kočka
    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
    Thin Solid Films 451-452 (2004) 408-412.
  18. K. Dohnalová, K. Luterová, J. Valenta, J. Buršík, M. Procházka, V. Křesálek, B. Hönerlage, I. Pelant
    Grains of Porous Silicon Embedded in SiO2: Studies of Optical Gain and Electroluminescence.
    Solid State Phenom. 99-100 (2004) 31 - 36
  19. K. Luterová, K. Dohnalová, V. Švrček, I. Pelant, J. P. Likforman, O. Crégut, P. Gilliot, B. Hönerlage
    Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation.
    Applied Physics Letters 84 (2004) 3280-3282.
  20. J. Kočka, A. Fejfar, T. Mates, P. Fojtík, K. Dohnalová, K. Luterová, J. Stuchlík, T. h. Stuchlíková, I. Pelant, B. Rezek, A. Stemmer, M. Ito
    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon.
    physica status solidi (c) 1 (2004) 1097-1114.
  21. A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka
    Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.
    J. Non-Cryst. Solids 338-340 (2004) 303 - 309
  22. J. Kočka, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, J. Stuchlík, I. Pelant, A. Fejfar, M. Ito, K. Ro, H. Uyama
    Formation of Microcrystalline Silicon at Low Temperatures and Role of Hydrogen
    Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
  23. G. Juška, N. Nekrašas, K. Arlauskas, J. Stuchlík, A. Fejfar, J. Kočka
    Photogenerated Carriers in mc-Si:H/a-Si:H Multilayers
    Journal of Non-Crystalline Solids 338-340 (2004) 353-356.
  24. J. Valenta, T. Ostatnický, I. Pelant, R. G. Elliman, J. Linnros, B. Hönerlage
    Microcavity-like leaky mode emission from planar optical waveguide made of silicon nanocrystals
    J. Appl. Phys. 96 (2004) 5222 - 5225
  25. V. Švrček, A. Slaoui, J. -C. Muller, J. -L. Rehspringer, B. Hönerlage, R. Tomasiunas, I. Pelant
    Studies of silicon nanocrystals in phosphorus rich SiO2 matrices.
    Physica E 16 (2003) 420 - 423
  26. P. Fojtík, K. Perronet, I. Pelant, J. Chval, F. Charra
    Photon emission from polycrystalline Ag induced by scanning tunneling microscopy: comparison of different tip materials.
    Surf. Sci. 531 (2003) 113 - 122
  27. B. Rezek, T. Mates, J. Stuchlík, J. Kočka, A. Stemmer
    Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
    Appl. Phys. Lett. 83 (2003) 1764 - 1766
  28. J. Valenta, I. Pelant, K. Luterová, R. Tomasiunas, S. Cheylan, R. G. Elliman, J. Linnros, B. Hönerlage
    Active planar optical waveguide made from luminescent silicon nanocrystals.
    Appl. Phys. Lett. 82 (2003) 955 - 957
  29. A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama
    Sructure and properties of silicon thin films deposited at low substrate temperatures
    Japanese Journal of Applied Physics 242 (2003) L987- L989.
  30. J. Kočka, A. Fejfar, T. h. Stuchlíková, J. Stuchlík, P. Fojtík, T. Mates, B. Rezek, K. Luterová, V. Švrček, I. Pelant
    Basic features of transport in microcrystalline silicon
    Solar Energy Materials and Solar Cells 78 (2003) 493-512.
  31. M. Ito, S. Yoneyama, Y. Ito, H. Uyama, T. Mates, M. Ledinský, K. Luterová, P. Fojtík, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Silicon thin films deposited at very low substrate temperature
    Thin Solid Films 442 (2003) 163-166.
  32. R. Tomasiunas, J. Valenta, K. Luterová, I. Pelant, J. Čtyroký, B. Hönerlage
    Study of wavequiding properties and optical gain in a luminescent layer of silicon nanocrystals
    Lithuanian J. Phys. 43 (2003) 235 - 241
  33. B. Rezek, C. Sauerer, C. E. Nebel, M. Stutzmann, J. Ristein, L. Ley, E. Snidero, P. Bergonzo
    Fermi level on hydrogen terminated diamond surfaces.
    Appl. Phys. Lett. 82 (2003) 2266
  34. B. Rezek, C. Sauerer, J. A. Garrido, C. E. Nebel, M. Stutzmann, E. Snidero, P. Bergonzo
    Scribing into hydrogenated diamond surfaces using atomic force microscopy.
    Appl. Phys. Lett. 82 (2003) 3336
  35. P. Malý, F. Trojánek, T. Miyoshi, K. Yamanaka, K. Luterová, I. Pelant, P. Němec
    Ultrafast carrier dynamics in CdSe nanocrystalline films on crystalline silicon substrate.
    Thin Solid Films 403-404 (2002) 462 - 466
  36. J. Kudrna, I. Pelant, J. Štěpánek, F. Trojánek, P. Malý
    Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.
    Appl. Phys. A-Mater. 74 (2002) 253 - 256
  37. V. Švrček, I. Pelant, P. Fojtík, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
    J. Appl. Phys. 92 (2002) 2323 - 2329
  38. I. Pelant, P. Fojtík, K. Luterová, J. Kočka, A. Poruba, J. Štěpánek
    Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
    Appl. Phys. A-Mater. 74 (2002) 557 - 560
  39. V. Švrček, I. Pelant, J. -L. Rehspringer, P. Gilliot, D. Ohlmann, O. Grégut, B. Hönerlage, T. Chvojka, J. Valenta, J. Dian
    Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon.
    Mat. Sci. Eng. C-Bio S. 19/1-2 (2002) 233 - 236
  40. J. Valenta, I. Pelant, J. Linnros
    Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystal.
    Appl. Phys. Lett. 81 (2002) 1396 - 1398
  41. B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka
    Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.
    J. Appl. Phys. 92 (2002) 587 - 593
  42. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  43. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  44. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  45. A. Fejfar, T. Šikola
    International Summer School Role of Physics in Future Applications: From Nanotechnology to Macroelectronics.
    Thin Silicon Newsletter, publ. by aSiNet thematic network newsletter within EC growth programme, editor: J. Andreu, No.3 (2002), 1  ISSN 1579-4555 ., 2002, pp. 1  ISSN 1579-4555
  46. V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
    Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 395 - 399
  47. T. Holec, T. Chvojka, I. Jelínek, J. Jindřich, I. Němec, I. Pelant, J. Valenta, J. Dian
    Determination of sensoric parameters of porous silicon in sensing of organic vapors.
    Mat. Sci. Eng. C-Bio S. 19 (2002) 251 - 254
  48. K. Luterová, I. Pelant, I. Mikulskas, R. Tomasiunas, D. Muller, J. -J. Grob, J. -L. Rehspringer, B. Hönerlage
    Stimulated emission in blue-emitting Si+-implanted SiO2 films?
    J. Appl. Phys. 91 (2002) 2896 - 2900
  49. G. Juška, N. Nekrašas, J. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
    Features of chrge carrier transport in mc-Si:H/a-Si:H superlattices
    Mater. Sci. Forum 384-385 (2002) 301 - 304
  50. G. Juška, K. Arlauskas, N. Nekrašas, J. Stuchlík, X. Niquille, N. Wyrch
    Features of Charge carrier transport determined from carrier extraction current in uc-Si:H.
    J. Non-Cryst. Solids 299-302 (2002) 375 - 379