J. Dian, T. Holec, I. Jelínek, J. Jindřich, J. Valenta, I. Pelant
Time Evolution of Photolumenscence Response from Porous Silicon in Hydrocarbon Gas Sensing.
phys. status solidi a 182 (2000) 485 - 488
J. Dian, J. Valenta, K. Luterová, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
Optical properties of Si+ ion implanted sol-gel derived SiO2 films.
Mat. Sci. Eng. B 69-70 (2000) 564 - 569
J. Kudrna, P. Malý, F. Trojánek, J. Štěpánek, T. Lechner, I. Pelant, J. Meier, U. Kroll
Ultrafast Carrier Dynamics in Undoped Microcrystalline Silicon.
Mat. Sci. Eng. B 69-70 (2000) 238 - 242
K. Luterová, A. Poruba, J. Dian, O. Salyk, P. Horváth, P. Knápek, J. Valenta, J. Kočka, I. Pelant
Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission.
J. Porous Mat. 7 (2000) 135 - 138
J. Valenta, J. Dian, K. Luterová, P. Knápek, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
Temperature behaviour of optical properties of Si+-implanted SiO2.
Eur. Phys. J. D 8 (2000) 395 - 398
G. Juška, K. Arlauskas, M. Viliunas, J. Kočka
Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon.
Phys. Rev. Lett. 84 (2000) 4946
K. Luterová, I. Pelant, P. Fojtík, M. Nikl, I. Gregora, J. Kočka, J. Dian, J. Valenta, P. Malý, J. Kudrna, J. Štěpánek, A. Poruba, P. Horváth
Visible photoluminescence and electroluminescence in wide-band gap hydrogenated amorphous silicon.
Philos. Mag. B 80 (2000) 1811 - 1832
I. Mikulskas, R. Šulcas, R. Tomašiunas, I. Pelant, J. L. Rehspringer, B. Hönerlage
Investigation of Si Nanocrystals embedded into porous SiO2 matrix.
Lithuanian J. Phys. 40 (2000) 160 - 163
K. Luterová, I. Pelant, J. Valenta, J. L. Rehspringer, D. Muller, J. J. Grob, J. Dian, B. Hönerlage
Red electroluminescence in Si+ implanted sol-gel-derived SiO2 films.
Appl. Phys. Lett. 77 (2000) 2952 - 2954
Surface and bulk light scattering in microcrystalline silicon for solar cells.
J. Non-Cryst. Solids 271 (2000) 152 - 156
Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.
J. Non-Cryst. Solids 266-269 (2000) 309 - 314
New method of drift mobility evaluation in uc-Si:H, basic idea and comparison with time-of-flight.
J. Non-Cryst. Solids 266-269 (2000) 331 - 335
Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition.
J. Non-Cryst. Solids 266-269 (2000) 583 - 587
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
J. Non-Cryst. Solids 266-269 (2000) 341 - 346
Optical absorption and light scattering in microcrystalline silicon thin films and solar cells.
J. Appl. Phys. 88 (2000) 148 - 160
Local photoconductivity correlation with granular structure of microcrystalline silicon thin films.
J. Non-Cryst. Solids 266-269 (2000) 315 - 318
Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities.
J. Non-Cryst. Solids 266-269 (2000) 650 - 653