Skupina laserové spektroskopie nanomateriálů na bázi křemíku

  1. P.Janda, J.Valenta, T.Ostatnický, E.Skopalová, I. Pelant, R.G.Elliman, R.Tomasiunas
    Silicon nanocrystals in silica - Novel active waveguides for nanophotonics.
    Journal of Luminescence 121 (2006) 267-273.
  2. K.Luterová, E.Skopalová, I. Pelant, M.Rejman, T.Ostatnický, J.Valenta
    Active planar optical waveguides with silicon nanocrystals: Leaky modes under different ambient conditions.
    Journal of Applied Physics 100 (2006) 074307-1-074307-4.
  3. P.Janda, J.Valenta, T.Ostatnický, I. Pelant, R.G.Elliman
    Light propagation in planar optical waveguides made of silicon nanocrystals buried in silica glass.
    Thin Solid Films 515 (2006) 797-800.
  4. F.Trojánek, K.Neudert, K.Žídek, K.Dohnalová, I. Pelant, P.Malý
    Femtosecond photoluminescence spectroscopy of silicon nanocrystals.
    physica status solidi (c) 3, č.11 (2006) 3873-3876.
  5. I. Pelant, J. Valenta
    Luminescence spectroscopy. I. Bulk crystalline semiconductors
    Učebnice, vydala AKADEMIA, ISBN 80-200-1447
  6. K. Luterová, M. Cazanelli, J. -P. Likforman, D. Navarro, J. Valenta, T. Ostatnický, K. Dohnalová, S. Cheylan, P. Gilliot, B. Honerlage, L. Pavesi, I. Pelant
    Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals
    Optical Materials 27 (2005) 750- 755.
  7. T. Ostatnický, J. Valenta, I. Pelant, K. Luterová, R. G. Elliman, S. Cheylan, B. Honerlage
    Photoluminescence from ana active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structures
    Optical Materials 27 (2005) 781- 786.
  8. K. Luterová, D. Navarro, M. Cazzanelli, T. Ostatnický, J. Valenta, S. Cheylan, I. Pelant, L. Pavesi
    Stimulated emission in the active planar optical waveguide made of silicon nanocrystals
    physica status solidi (c) 2 (2005) 3429-3434.
  9. K. Luterová, V. Švrček, T. Mates, M. Ledinský, M. Ito, A. Fejfar, J. Kočka
    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
    Thin Solid Films 451-452 (2004) 408-412.
  10. K. Dohnalová, K. Luterová, J. Valenta, J. Buršík, M. Procházka, V. Křesálek, B. Hönerlage, I. Pelant
    Grains of Porous Silicon Embedded in SiO2: Studies of Optical Gain and Electroluminescence.
    Solid State Phenom. 99-100 (2004) 31 - 36
  11. K. Luterová, K. Dohnalová, V. Švrček, I. Pelant, J. P. Likforman, O. Crégut, P. Gilliot, B. Hönerlage
    Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation.
    Applied Physics Letters 84 (2004) 3280-3282.
  12. J. Kočka, A. Fejfar, T. Mates, P. Fojtík, K. Dohnalová, K. Luterová, J. Stuchlík, T. h. Stuchlíková, I. Pelant, B. Rezek, A. Stemmer, M. Ito
    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon.
    physica status solidi (c) 1 (2004) 1097-1114.
  13. A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka
    Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.
    J. Non-Cryst. Solids 338-340 (2004) 303 - 309
  14. J. Kočka, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, J. Stuchlík, I. Pelant, A. Fejfar, M. Ito, K. Ro, H. Uyama
    Formation of Microcrystalline Silicon at Low Temperatures and Role of Hydrogen
    Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
  15. J. Valenta, T. Ostatnický, I. Pelant, R. G. Elliman, J. Linnros, B. Hönerlage
    Microcavity-like leaky mode emission from planar optical waveguide made of silicon nanocrystals
    J. Appl. Phys. 96 (2004) 5222 - 5225
  16. V. Švrček, A. Slaoui, J. -C. Muller, J. -L. Rehspringer, B. Hönerlage, R. Tomasiunas, I. Pelant
    Studies of silicon nanocrystals in phosphorus rich SiO2 matrices.
    Physica E 16 (2003) 420 - 423
  17. P. Fojtík, K. Perronet, I. Pelant, J. Chval, F. Charra
    Photon emission from polycrystalline Ag induced by scanning tunneling microscopy: comparison of different tip materials.
    Surf. Sci. 531 (2003) 113 - 122
  18. J. Valenta, I. Pelant, K. Luterová, R. Tomasiunas, S. Cheylan, R. G. Elliman, J. Linnros, B. Hönerlage
    Active planar optical waveguide made from luminescent silicon nanocrystals.
    Appl. Phys. Lett. 82 (2003) 955 - 957
  19. A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama
    Sructure and properties of silicon thin films deposited at low substrate temperatures
    Japanese Journal of Applied Physics 242 (2003) L987- L989.
  20. J. Kočka, A. Fejfar, T. h. Stuchlíková, J. Stuchlík, P. Fojtík, T. Mates, B. Rezek, K. Luterová, V. Švrček, I. Pelant
    Basic features of transport in microcrystalline silicon
    Solar Energy Materials and Solar Cells 78 (2003) 493-512.
  21. M. Ito, S. Yoneyama, Y. Ito, H. Uyama, T. Mates, M. Ledinský, K. Luterová, P. Fojtík, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Silicon thin films deposited at very low substrate temperature
    Thin Solid Films 442 (2003) 163-166.
  22. R. Tomasiunas, J. Valenta, K. Luterová, I. Pelant, J. Čtyroký, B. Hönerlage
    Study of wavequiding properties and optical gain in a luminescent layer of silicon nanocrystals
    Lithuanian J. Phys. 43 (2003) 235 - 241
  23. P. Malý, F. Trojánek, T. Miyoshi, K. Yamanaka, K. Luterová, I. Pelant, P. Němec
    Ultrafast carrier dynamics in CdSe nanocrystalline films on crystalline silicon substrate.
    Thin Solid Films 403-404 (2002) 462 - 466
  24. J. Kudrna, I. Pelant, J. Štěpánek, F. Trojánek, P. Malý
    Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.
    Appl. Phys. A-Mater. 74 (2002) 253 - 256
  25. V. Švrček, I. Pelant, P. Fojtík, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
    J. Appl. Phys. 92 (2002) 2323 - 2329
  26. I. Pelant, P. Fojtík, K. Luterová, J. Kočka, A. Poruba, J. Štěpánek
    Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
    Appl. Phys. A-Mater. 74 (2002) 557 - 560
  27. V. Švrček, I. Pelant, J. -L. Rehspringer, P. Gilliot, D. Ohlmann, O. Grégut, B. Hönerlage, T. Chvojka, J. Valenta, J. Dian
    Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon.
    Mat. Sci. Eng. C-Bio S. 19/1-2 (2002) 233 - 236
  28. J. Valenta, I. Pelant, J. Linnros
    Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystal.
    Appl. Phys. Lett. 81 (2002) 1396 - 1398
  29. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  30. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  31. V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
    Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 395 - 399
  32. T. Holec, T. Chvojka, I. Jelínek, J. Jindřich, I. Němec, I. Pelant, J. Valenta, J. Dian
    Determination of sensoric parameters of porous silicon in sensing of organic vapors.
    Mat. Sci. Eng. C-Bio S. 19 (2002) 251 - 254
  33. K. Luterová, I. Pelant, I. Mikulskas, R. Tomasiunas, D. Muller, J. -J. Grob, J. -L. Rehspringer, B. Hönerlage
    Stimulated emission in blue-emitting Si+-implanted SiO2 films?
    J. Appl. Phys. 91 (2002) 2896 - 2900
  34. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.
  35. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  36. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  37. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  38. V. Švrček, I. Pelant, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philos. Mag. Lett. 81 (2001) 405 - 410
  39. J. Valenta, J. Dian, K. Luterová, I. Pelant, J. Buršík, D. Nižňanský
    Electroluminescence from Sol-Gel Derived Film of CdS Nanocrystals.
    phys. status solidi a 184 (2001) R1 - R3
  40. J. Kudrna, F. Trojánek, P. Malý, I. Pelant
    Carrier diffusion in microcrystalline silicon studied by picosecond laser induced grating technique.
    Appl. Phys. Lett. 79 (2001) 626 - 628
  41. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  42. J. Mikulskas, R. Šulcas, E. Vanagas, R. Tomašiunas, K. Luterová, I. Pelant, J. -L. Rehspringer, R. Lévy
    Si+ and Ge+ ion implanted SiO2 matrices: Photoluminiscence pecularities.
    Lithuanian J. Phys. 41 (2001) 399 - 403
  43. I. Pelant, P. Fojtik, K. Luterova, J. Kočka, K. Knížek, J. Stepanek
    Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
    Thin Solid Films 383 (2001) 101-103.
  44. J. Dian, T. Holec, I. Jelínek, J. Jindřich, J. Valenta, I. Pelant
    Time Evolution of Photolumenscence Response from Porous Silicon in Hydrocarbon Gas Sensing.
    phys. status solidi a 182 (2000) 485 - 488
  45. J. Dian, J. Valenta, K. Luterová, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
    Optical properties of Si+ ion implanted sol-gel derived SiO2 films.
    Mat. Sci. Eng. B 69-70 (2000) 564 - 569
  46. J. Kudrna, P. Malý, F. Trojánek, J. Štěpánek, T. Lechner, I. Pelant, J. Meier, U. Kroll
    Ultrafast Carrier Dynamics in Undoped Microcrystalline Silicon.
    Mat. Sci. Eng. B 69-70 (2000) 238 - 242
  47. K. Luterová, A. Poruba, J. Dian, O. Salyk, P. Horváth, P. Knápek, J. Valenta, J. Kočka, I. Pelant
    Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission.
    J. Porous Mat. 7 (2000) 135 - 138
  48. J. Valenta, J. Dian, K. Luterová, P. Knápek, I. Pelant, M. Nikl, D. Muller, J. J. Grob, J. L. Rehspringer, B. Hönerlage
    Temperature behaviour of optical properties of Si+-implanted SiO2.
    Eur. Phys. J. D 8 (2000) 395 - 398
  49. K. Luterová, I. Pelant, P. Fojtík, M. Nikl, I. Gregora, J. Kočka, J. Dian, J. Valenta, P. Malý, J. Kudrna, J. Štěpánek, A. Poruba, P. Horváth
    Visible photoluminescence and electroluminescence in wide-band gap hydrogenated amorphous silicon.
    Philos. Mag. B 80 (2000) 1811 - 1832
  50. I. Mikulskas, R. Šulcas, R. Tomašiunas, I. Pelant, J. L. Rehspringer, B. Hönerlage
    Investigation of Si Nanocrystals embedded into porous SiO2 matrix.
    Lithuanian J. Phys. 40 (2000) 160 - 163