Litografický systém s elektronovým paprskem, e-Line

System for electron-beam lithography allows for the preparation of resin masks on the surface of thin ©lms of semiconductors and metals, achieving lateral resolution of 10 nm. Materials with corresponding resin mask can further be patterned in a dry etching reactor using reactive ions and ion milling, resulting in nanostructures with characteristic detail size down to 50 nm.