Image
Text
Molecular beam epitaxy system equipped with two interconnected growth chambers and one UHV chamber for deposition by vacuum evaporation. The system is designed for the growth of high-quality ultraclean quantum heterostructures based on semiconductors of the III-V family, in particular GaAs/AlGaAs/InGaAs, and other semiconducting, semi-metallic, and metallic materials for spintronics.