Tip-Enhanced Spectroscopy Studies of 2D Materials

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Methods for nanoscale material characterization are in ever-increasing demand, especially those that can provide a broader range of information at once. Near-field techniques based on combinations of scanning probe microscopy (SPM) and Raman or photoluminescence (PL) spectroscopy (tip-enhanced Raman spectroscopy [TERS] and/or tip-enhanced PL [TEPL]) are, thanks to their capabilities and fast development, strong candidates for becoming widespread across the scientific community as SPM and Raman microscopy did only a decade or two ago. In the present talk, several examples of the utilization of Tip-Enhanced methods will be shown, mostly employed to mono- and bilayer MoS2: (i) gap-less TEPL study of as-grown MoS2 on silicon with different SiO2 thickness, and (ii) gapped-mode TERS of MoS2 mechanically exfoliated on gold layers with varying thickness. Additional characterization methods like KPFM, CAFM, NanoXPS or Spectroscopic Imaging Ellipsometry accompanied the TEPL/TERS to gain further insights into the optoelectronic and crystal structure of the studied samples