Manganese telluride in its NiAs-type phase is a semiconductor with a complicated structure of the valence band. Its antiferromagnetically ordered magnetic moments respond to certain degree to applied magnetic field and transport measurements of the p-type thin layers exhibit various types of anisotropic magnetoresistance (AMR) [1,2]. QSGW calculations show, contrary to the recent study  based on DFT, that the actual valence band top occurs close to the A-point of the Brillouin zone and an effective six-band model is developed. Conductivity calculated using Boltzmann formalism with microscopically evaluated relaxation times reveals the possible sources of this AMR and opens the prospect of 'business as usual' with semiconductor theory applied to MnTe.
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