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Abstract:
Design and fabrication of electronic and optoelectronic devices require accurate knowledge of the optical constants of all materials in the device. For fabrication, thickness and properties of device layers need to be characterized. To predict performance of optical devices, we also need to know the optical constants (absorption coefficient and refractive index) of all materials. Spectroscopic ellipsometry has been the metrology method of choice in the semiconductor industry for many years, but current applications only scratch the surface of the potential capabilities of this technique. My talk will discuss how ellipsometry can investigate some basic physics questions, especially how to study electrons and phonons in semiconductors and complex metal oxides. I will also show examples how ellipsometry can provide experimental verification of current issues in condensed matter theory.
This work was funded, in part, by the Air Force Office of Scientific Research (FA9550-13-1-0022) and by the National Science Foundation (DMR-1505172). The work in Prague was supported by the European Union Structural and Investment Funds and the Czech Ministry of Education, Youth, and Sports (CZ.02.2.69/0.0/0.0/16_027/0008215, Project IOP Researchers Mobility).
This work was funded, in part, by the Air Force Office of Scientific Research (FA9550-13-1-0022) and by the National Science Foundation (DMR-1505172). The work in Prague was supported by the European Union Structural and Investment Funds and the Czech Ministry of Education, Youth, and Sports (CZ.02.2.69/0.0/0.0/16_027/0008215, Project IOP Researchers Mobility).