1. P. Morávek, J. Pangrác, M. Fulem, E. Hulicius, K. Růžička
    Vapor pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum
    Journal of Chemical & Engineering Data 59 (2014) 4179-4183.
  2. M. Pokorný, M. Kozák, F. Trojánek, J. Pangrác, A. Hospodková
    Type-I InAs quantum dots covered by GaAsSb strain reducing layer
    Proceedings of SPIE 9161 (2014) 916113(1)-916113(4).
  3. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  4. G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou
    Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
    Applied Surface Science 306 (2014) 89-93.
  5. Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius
    Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
    Journal of Crystal Growth 396 (2014) 54-60.
  6. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).