1. S. Honda, T. Mates, M. Ledinský, J. Oswald, A. Fejfar, J. Kočka, T. Yamazaki, Y. Uraoka, T. Fuyuk
    Effect of hydrogen passivation on polycrystalline silicon thin films
    Thin Solid Films 487 (2005) 152- 156.
  2. K. Luterová, V. Švrček, T. Mates, M. Ledinský, M. Ito, A. Fejfar, J. Kočka
    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
    Thin Solid Films 451-452 (2004) 408-412.
  3. J. Kočka, A. Fejfar, T. Mates, P. Fojtík, K. Dohnalová, K. Luterová, J. Stuchlík, T. h. Stuchlíková, I. Pelant, B. Rezek, A. Stemmer, M. Ito
    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon.
    physica status solidi (c) 1 (2004) 1097-1114.
  4. A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka
    Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.
    J. Non-Cryst. Solids 338-340 (2004) 303 - 309
  5. J. Kočka, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, J. Stuchlík, I. Pelant, A. Fejfar, M. Ito, K. Ro, H. Uyama
    Formation of Microcrystalline Silicon at Low Temperatures and Role of Hydrogen
    Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
  6. G. Juška, N. Nekrašas, K. Arlauskas, J. Stuchlík, A. Fejfar, J. Kočka
    Photogenerated Carriers in mc-Si:H/a-Si:H Multilayers
    Journal of Non-Crystalline Solids 338-340 (2004) 353-356.
  7. A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama
    Sructure and properties of silicon thin films deposited at low substrate temperatures
    Japanese Journal of Applied Physics 242 (2003) L987- L989.
  8. J. Kočka, A. Fejfar, T. h. Stuchlíková, J. Stuchlík, P. Fojtík, T. Mates, B. Rezek, K. Luterová, V. Švrček, I. Pelant
    Basic features of transport in microcrystalline silicon
    Solar Energy Materials and Solar Cells 78 (2003) 493-512.
  9. M. Ito, S. Yoneyama, Y. Ito, H. Uyama, T. Mates, M. Ledinský, K. Luterová, P. Fojtík, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Silicon thin films deposited at very low substrate temperature
    Thin Solid Films 442 (2003) 163-166.
  10. V. Švrček, I. Pelant, P. Fojtík, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
    J. Appl. Phys. 92 (2002) 2323 - 2329
  11. B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka
    Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.
    J. Appl. Phys. 92 (2002) 587 - 593
  12. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  13. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  14. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  15. A. Fejfar, T. Šikola
    International Summer School Role of Physics in Future Applications: From Nanotechnology to Macroelectronics.
    Thin Silicon Newsletter, publ. by aSiNet thematic network newsletter within EC growth programme, editor: J. Andreu, No.3 (2002), 1  ISSN 1579-4555 ., 2002, pp. 1  ISSN 1579-4555
  16. V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
    Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 395 - 399
  17. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.
  18. J. Kočka, A. Fejfar, P. Fojtík, K. Luterová, I. Pelant, B. Rezek, T. h. Stuchlíková, J. Stuchlík, V. Švrček
    Charge transport in microcrystalline Si- the specific features.
    Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
  19. V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, T. h. Stuchlíková, A. Fejfar, J. Stuchlík, A. Poruba, J. Toušek
    Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
    J. Appl. Phys. 89 (2001) 1800 - 1805
  20. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Microcrystalline Silicon - Relation between Transport and Microstructure.
    Solid State Phenom. 80-81 (2001) 213 - 224
  21. V. Švrček, I. Pelant, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philos. Mag. Lett. 81 (2001) 405 - 410
  22. V. Švrček, I. Pelant, J. Stuchlík, A. Fejfar, J. Kočka
    Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
    Thin Solid Films 383 (2001) 271 - 273
  23. J. Kočka, J. Stuchlík, T. h. Stuchlíková, V. Svrček, P. Fojtík, T. Mates, K. Luterová, A. Fejfar
    Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
    Appl. Phys. Lett. 79 (2001) 2540 - 2542
  24. A. Poruba, A. Fejfar, O. Salyk, M. Vaněček, J. Kočka
    Surface and bulk light scattering in microcrystalline silicon for solar cells.
    J. Non-Cryst. Solids 271 (2000) 152 - 156
  25. A. Fejfar, B. Rezek, P. Knápek, J. Stuchlík, J. Kočka
    Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.
    J. Non-Cryst. Solids 266-269 (2000) 309 - 314
  26. G. Juška, K. Genevičius, M. Viliunas, K. Arlauskas, T. h. Stuchlíková, A. Fejfar, J. Kočka
    New method of drift mobility evaluation in uc-Si:H, basic idea and comparison with time-of-flight.
    J. Non-Cryst. Solids 266-269 (2000) 331 - 335
  27. K. Nakahata, T. Kamiya, C. M. Fortmann, I. Schimizu, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
    J. Non-Cryst. Solids 266-269 (2000) 341 - 346
  28. A. Poruba, A. Fejfar, Z. Remeš, J. Springer, M. Vaněček, J. Kočka
    Optical absorption and light scattering in microcrystalline silicon thin films and solar cells.
    J. Appl. Phys. 88 (2000) 148 - 160
  29. J. Zemek, A. Luches, G. Leggieri, A. Fejfar, M. Trchová
    Characterization of carbon nitride films prepared by laser reactive ablation deposition
    J. Electr. Spectr. Relat. Phenom. 76 (1995) 747 - 752
  30. M. Vanecek, J. Kočka, A. Poruba, A. Fejfar
    Direct measurement of the deep defect density in thin amorphous silicon films with the
    Journal of Applied Physics 78 (1995) 6203-6213.