1. V. Švrček, I. Pelant, P. Fojtík, J. Kočka, A. Fejfar, J. Toušek, M. Kondo, A. Matsuda
    Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.
    J. Appl. Phys. 92 (2002) 2323 - 2329
  2. B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka
    Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.
    J. Appl. Phys. 92 (2002) 587 - 593
  3. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  4. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  5. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  6. A. Fejfar, T. Šikola
    International Summer School Role of Physics in Future Applications: From Nanotechnology to Macroelectronics.
    Thin Silicon Newsletter, publ. by aSiNet thematic network newsletter within EC growth programme, editor: J. Andreu, No.3 (2002), 1  ISSN 1579-4555 ., 2002, pp. 1  ISSN 1579-4555
  7. V. Švrček, A. Fejfar, P. Fojtík, T. Mates, A. Poruba, T. h. Stuchlíková, I. Pelant, J. Kočka, Y. Nasuno, M. Kondo, A. Matsuda
    Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 395 - 399
  8. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.