1. N. Lambert, K.-D. Sung, V. Mortet
    Optical Emission Spectroscopy Analysis of Microwave Plasma-Enhanced Chemical Vapor Deposition Systems Dynamic Gas Response
    physica status solidi (a) 220 (2023) 2200322 (1)-2200322(5).
  2. Z. Weiss, P. Ashcheulov, N. Lambert, A. Taylor, J. Lorincik, K.-D. Sung, M. Davydova, V. Mortet
    Analysis of boron- and phosphorus-doped diamond layers by glow discharge optical emission spectroscopy in argon and neon
    Vacuum 210 (2023) 111890(1)-111890(8).
  3. V. Mortet, A. Taylor, M. Davydova, J.Jiránek, L. Fekete, L. Klimša, D. Šimek, N. Lambert, S. Sedláková, J. Kopeček, P.Hazdra
    Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
    Diamond and Related Materials 122 (2022) 108887(1)-108887(6).
  4. P. Hazdra, A. Laposa, Z. Šobáň, J. Voves, N. Lambert, M. Davydova, V. Povolný, A. Taylor, V. Mortet
    Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
    Diamond and Related Materials 121 (2022) 108797(1)-108797(7).
  5. V. Mortet, A. Taylor, M. Davydova, M. Lamač, N. Lambert, I.Elantyev, J.Lorinčík, D.Troadec, M. Vronka, Š. Potocký
    Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond
    Diamond and Related Materials 124 (2022) 108928(1)-108928(6).
  6. N. Lambert, Z. Weiss, L. Klimša, J. Kopeček, Z. Gedeonová, P. Hubík, V. Mortet
    Highly phosphorus-doped polycrystalline diamond growth and properties
    Diamond and Related Materials 125 (2022) 108964(1)-108964(6).
  7. Z. Šobáň, P. Hazdra, A. Laposa, A. Taylor, N. Lambert, V. Povolný, J. Kroutil, Z. Gedeonová, P. Hubík, V. Mortet
    Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers
    Diamond and Related Materials 126 (2022) 109088(1)-109088(6).
  8. V. Mortet, A. Taylor, N. Lambert, Z. Gedeonová, L. Fekete, J. Lorinčik, L. Klimša, J. Kopeček, P. Hubík, Z. Šobáň, A. Laposa, M. Davydova, J. Voves, A. Pošta, V. Povolný, P. Hazdra
    Properties of boron-doped (113) oriented homoepitaxial diamond layers
    Diamond and Related Materials 111 (2021) 108223(1)-108223(6).
  9. V. Mortet, I. Gregora, A. Taylor, N. Lambert, P. Ashcheulov, Z. Gedeonová, P. Hubík
    New perspectives for heavily boron-doped diamond Raman spectrum analysis
    Carbon 168 (2020) 319-327.
  10. N. Lambert, A. Taylor, P. Hubík, J. Bulíř, J. More Chevalier, H. Karaca, C. Fleury, J. Voves, Z. Šobáň, D. Pogany, V. Mortet
    Modeling current transport in boron-doped diamond at high electric fields including self-heating effect
    Diamond and Related Materials 109 (2020) 108003(1)-108003(11).
  11. V. Mortet, L. Dubovská, N. Lambert, A. Taylor, P. Ashcheulov, M. Davydova, J.Lorincik, M. Aleshin, P. Hubik
    Conductivity of boron-doped diamond at high electrical field
    Diamond and Related Materials 98 (2019) 107476 (1)-107476 (5).
  12. V. Mortet, L. Dubovská, N. Lambert, A. Taylor, P. Ashcheulov, M. Davydova, J. Lorincik, M. Aleshin, P. Hubík
    Conductivity of boron-doped diamond at high electrical field
    Diamond and Related Materials 98 (2019) 107476(1)-107476(5).
  13. V. Mortet, A. Taylor, M. Davydova, L. Fekete, Z. Vlčková Živcová, L. Klimša, N. Lambert, P. Hubík, D. Trémouilles, A. Soltani
    Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond
    MRS Advances 3 (2018) 1931-1938.